SB280-G Datasheet | Specifications & PDF Download

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SB220 THRU SB2B0 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 2.0 Amperes Features Plastic package has Underwriters

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FUSB2805 — USB2.0 High-Speed OTG Transceiver with ULPI Interface September 2013 FUSB2805 USB2.0 High-Speed OTG Transceiver with ULPI Interface Feat

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Schottky Barrier Rectifier 2A, 20~200V DO-15 SB220 to SB2200 FEATURE  Operating Temperature: -55 ~ 150ºC  High Current and Surge Capability  Low

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Leaded Schottky Barrier Rectifiers SB220-G Thru. SB2100-G Voltage: 20 to 100 V Current: 2.0 A RoHS Device Features -Low drop down voltage. -Metal-Semi

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SB220 THRU SB2200 2 .0 A M P SC HO TTKY BA RRIER REC TIFIERS o FEATURES * Low forward voltage drop * High current capability * High reliability * Hi

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LESHAN RADIO COMPANY, LTD. SB220 thru SB2100 1.Feature & Dimensions Schottky Barrier Rectifiers * Plastic package has Underwriters Laboratory Flam

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Features • Lead Free Finish/RoHS Compliant(Note 1) ( P Suffix Designates Compliant. See Ordering Information) • Guardring For Overvoltage Protection

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® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 50A Peak  Low Power L

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SCHOTTKY BARRIER RECTIFIER SB220 ~ SB2100 Schottky Barrier Rectifier Features • Guarding for overvoltage protection • Low forward voltage • Low pow

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BL GALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIER SB270 ---SB2A0 VOLTAGE RANGE: 70 --- 100 V CURRENT: 2.0 A FEATURES Metal-Semiconductor junction with

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Features -Low forward voltage drop -High current capability -High reliability -High surge current capability -Epitaxial construction SB220 ~ SB2100 S

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www.eicsemi.com SB220 - SB2B0 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 100 Volts IO : 2.0 Amperes DO-15 FEATURES : * High current capability

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Z ibo Seno Electronic Engineering Co., Ltd. SB220 – SB2200 2.0A SCHOTTKY BARRIER DIODE Features Schottky Barrier Chip Guard Ring Die Construc

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SMD Type Schottky Diodes SB220 ~ SB2200 Diodes ■ Features ● Metal silicon junction,majority carrier conduction ● Low power loss,high efficiency ● H

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n-Channel Power MOSFET OptiMOS™ BSB280N15NZ3 G Data Sheet 2.5, 2011-09-16 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB280N15NZ3 G 1 Desc

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SCHOTTKY BARRIER RECTIFIERS FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capabil

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CYStech Electronics Corp. Spec. No. : C777LG Issued Date : 2011.08.16 Revised Date : Page No. : 1/3 Schottky Barrier Rectifiers Reverse Voltage 70V

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1.0(25.4) MAX. 0.300(7.6) 0.230(5.8) 1.0(25.4) MAX. SB220 THRU SB2200 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current -

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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