SHANGHAI SUNRISE ELECTRONICS CO., LTD. SB85 SILICO.
Inchange Semiconductor
11
2SB857 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor 2SB857 DESCRIPTION ·Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -2A ·Hi.
SavantIC
10
2SB857 - (2SB857 / 2SB858) SILICON POWER TRANSISTOR
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB857 2SB858 · DESCRIPTION ·With TO-220C package ·.
NXP
9
1PS70SB85 - Schottky barrier double diodes
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 Schottky barrier (double) diodes Product specifi.
Renesas
8
B857 - 2SB857
2SB857, 2SB858 Silicon PNP Triple Diffused www.DataSheet4U.com Application Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134.
Hitachi Semiconductor
7
2SB857 - Silicon PNP Transistor
2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134 Outline TO-220AB 1.
Rohm
7
2SB851 - PNP Silicon Transistor
This Material Copyrighted By Its Respective Manufacturer Free Datasheet http://www.datasheet4u.com/ This Material Copyrighted By Its Respective Manuf.
Hi-Sincerity Mocroelectronics
6
HSB857 - PNP EPITAXIAL PLANAR TRANSISTOR
HI-SINCERITY MICROELECTRONICS CORP. HSB857 / 2SB857 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6705 Issued Date : 1995.01.27 Revised Date : 2005.1.
TY Semiconductor
6
2SB852 - Transistor
Product specification 2SB852 ■ Features ● Darlington connection for high DC current gain. ● Built-in 4kΩ resistor between base and emitter. +0.1 2.4-.
Pan Jit International Inc.
5
SB850 - SCHOTTKY BARRIER RECTIFIERS
DATA SHEET SB820~SB8100 SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 100 Volts FEATURES • Plastic package has Underwriters Laboratory Flammability Classi.
Hitachi Semiconductor
5
B858 - 2SB858
2SB857, 2SB858 Silicon PNP Triple Diffused www.DataSheet4U.com Application Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134.
RECTRON
4
CSB857 - Power Transistors
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2..
Shanghai Sunrise Electronics
4
SB850 - SCHOTTKY BARRIER RECTIFIER
SHANGHAI SUNRISE ELECTRONICS CO., LTD. SB820 THRU SB860 SCHOTTKY BARRIER RECTIFIER VOLTAGE: 20 TO 60V CURRENT: 8.0A FEATURES • Epitaxial construction .
Inchange Semiconductor
4
2SB855 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor 2SB855 DESCRIPTION ·Collector Current: IC= -2A ·Low Collector Saturation Voltage : VCE(sat)= -1.2V(Max)@IC= -2A ·Hi.
Renesas
4
2SB857 - Silicon PNP Transistor
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. Th.
Rohm
3
2SB852K - High-gain Amplifier Transistor
Transistors 2SB852K High-gain Amplifier Transistor (−32V, −0.3A) 2SB852K zFeatures 1) Darlington connection for high DC current gain. 2) Built-in .
Hitachi Semiconductor
3
2SB858 - Silicon PNP Transistor
2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134 Outline TO-220AB 1.
Shanghai Sunrise Electronics
3
SB85 - SILICON SCHOTTKY DETECTING DIODE
SHANGHAI SUNRISE ELECTRONICS CO., LTD. SB85 SILICON SCHOTTKY DETECTING DIODE REVERSE VOLTAGE: 50V FORWARD CURRENT: 150mA FEATURES • Small glass struct.
UPM
3
SB850D - SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER
UPM SB820D~SB8150D D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER Voltage Range 20 to 150 Volts Current 8 Amperes Features * Plastic package has Unde.
Pan Jit International Inc.
3
SB850DC - D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER
A p p r o v e S h e e t Par tN umber : SB820DC~SB8 100DC art Number umber: SB820DC~SB81 DATA SHEET SB820DC~SB8100DC D 2PAK SURFACE MOUNTSCHOTTKY BARR.
