BUILT-IN TYPE Big Size Built-in Model •Suitable.
STI50DE100 - Hybrid Emitter Switched Bipolar Transistor ESBT
www.DataSheet4U.com STI50DE100 Hybrid Emitter Switched Bipolar Transistor ESBT® 1000 V - 50 A - 0.026 Ω Preliminary Data General features VCS(ON) 1..VPM04F - HYBRID INTERGRATED CIRCUITS/WITH FBET/LSBT PROCESSS CHIPS/WIDE BANDWIDTH VIDEO OUTPUT ICS
.SBT5401 - PNP Silicon Transistor
Semiconductor SBT5401 PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • high collector breakdown.SBT-16-G-J11-MPB - Projection Chipset
PRODUCT DATA SHEET PhlatLight™ SBT16 Projection Chipset Technology Overview Luminus Devices’ Projection Technology (PT) is an innovative solid-state.SBT42 - NPN Silicon Transistor
Semiconductor SBT42 NPN Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage VCE.SBT150-10Y - Schottky Barrier Diode 100V 15A Rectifier
Ordering number : ENN7795 SBT150-10Y www.DataSheet4U.com SBT150-10Y Applications • Schottky Barrier Diode (Twin Type · Cathode Common) 100V, 15A R.SBT100-16JS - Schottky Barrier Diode
Ordering number : ENA0442 SBT100-16JS SANYO Semiconductors DATA SHEET SBT100-16JS Schottky Barrier Diode (Twin Type · Cathode Common) 160V, 10A Rec.DSBT2-M-2D-DC12V - 4/000 V BREAKDOWN VOLTAGE DS RELAYS
TESTING 4,000 V BREAKDOWN VOLTAGE DS RELAYS DS-BT RELAYS FEATURES 20.65 .813 10.65 .419 10.5 .413 •4,000 V breakdown voltage •Reinforced insulatio.DSBT2-S-2D-DC24V - 4/000 V BREAKDOWN VOLTAGE DS RELAYS
TESTING 4,000 V BREAKDOWN VOLTAGE DS RELAYS DS-BT RELAYS FEATURES 20.65 .813 10.65 .419 10.5 .413 •4,000 V breakdown voltage •Reinforced insulatio.DSBT2-S-2D-DC6V - 4/000 V BREAKDOWN VOLTAGE DS RELAYS
TESTING 4,000 V BREAKDOWN VOLTAGE DS RELAYS DS-BT RELAYS FEATURES 20.65 .813 10.65 .419 10.5 .413 •4,000 V breakdown voltage •Reinforced insulatio.SBTC-2-20L - Power Splitter/Combiners 2 Way-0 50 200 to 2000 MHz
Surface Mount Power Splitter/Combiners 2 Way-0° 50Ω Maximum Ratings Operating Temperature Storage Temperature Power Input (as a splitter) Internal Di.SBTC-2-25L - Power Splitter/Combiners 2 Way-0 50 1000 to 2500 MHz
Surface Mount, Micro-Miniature Power Splitter/Combiners 2 Way-0° 50Ω Maximum Ratings Operating Temperature Storage Temperature Power Input (as a spli.VPS10 - HYBRID INTERGRATED CIRCUITS/WITH FBET/LSBT PROCESSS CHIPS/WIDE BANDWIDTH VIDEO OUTPUT ICS
Ordering number : EN5209 Wide-Bandwidth Output Module (video pack) VPS10 CRT Display Video Output Amplifier: High-Voltage, Wideband Amplification F.SBT-16-B-J11-EPB - Projection Chipset
PRODUCT DATA SHEET PhlatLight™ SBT16 Projection Chipset Technology Overview Luminus Devices’ Projection Technology (PT) is an innovative solid-state.LC320WUD-SBT1 - WUXGA TFT LCD
LC320WUD Product Specification SPECIFICATION FOR APPROVAL ( ) Preliminary Specification ( ● ) Final Specification Title BUYER MODEL General 32..DSBT2-S-2D-DC3V - 4/000 V BREAKDOWN VOLTAGE DS RELAYS
TESTING 4,000 V BREAKDOWN VOLTAGE DS RELAYS DS-BT RELAYS FEATURES 20.65 .813 10.65 .419 10.5 .413 •4,000 V breakdown voltage •Reinforced insulatio.SBT2222A - NPN Silicon Transistor
Semiconductor SBT2222A NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • L.SBT3904F - NPN Silicon Transistor
Semiconductor SBT3904F NPN Silicon Transistor Descriptions • General small signal application • Switching application Features • Low collector satu.SBT5551 - NPN Silicon Transistor
Semiconductor SBT5551 NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • high collector breakdow.SBTC-2-10L - Power Splitter/Combiners 2 Way-0 50 5 to 1000 MHz
Surface Mount Power Splitter/Combiners 2 Way-0° 50Ω Maximum Ratings Operating Temperature Storage Temperature Power Input (as a splitter) Internal Di.