SBT Datasheet | Specifications & PDF Download

SBT1020 SBT10100 SBT1020 SBT10100 Schottky Barrier Rectifier Diodes Schottky-Gleichrichterdioden IFAV = 10 A VF1 < 0.55 V Tjmax = 150°C VRR

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Semiconductor SBT42 NPN Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage VCE

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SBT1020 SBT10100 SBT1020 SBT10100 Schottky Barrier Rectifier Diodes Schottky-Gleichrichterdioden IFAV = 10 A VF1 < 0.55 V Tjmax = 150°C VRR

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SBT1020 SBT10100 SBT1020 SBT10100 Schottky Barrier Rectifier Diodes Schottky-Gleichrichterdioden IFAV = 10 A VF1 < 0.55 V Tjmax = 150°C VRR

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LC470WUD Product Specification SPECIFICATION FOR APPROVAL ( ) Preliminary Specification ( ● ) Final Specification Title BUYER MODEL General 47.

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LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z Pb-Free Package is Available. z S- Prefix for Automotive and Other Applications Requiring Unique Si

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Ogam Technology Update : 2015.04.14 PRODUCT INFORMATION GSBT11, GSBT11-Pxxx 1/8 VOCs Sensor - for the detection of Formaldehyde Toluene, Organic So

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BUILT-IN TYPE Big Size Built-in Model •Suitable for Big Machine Motors. •Mountable for The Shaft 14~ 26 mm. SBT Model Model SBT – Resolution – –

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LC320WUD Product Specification SPECIFICATION FOR APPROVAL ( ) Preliminary Specification ( ● ) Final Specification Title BUYER MODEL General 32.

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LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z Pb-Free Package is Available. z S- Prefix for Automotive and Other Applications Requiring Unique Si

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Semiconductor SBT5551F NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • high collector breakdo

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RESONATOR ZTB 500F LEADED TYPE 500KHz Part no. ZTB 500F 2 ZTB 500F 9 ZTB 500F 13 ZTB 500F 28 ZTB 500F 40 www.DataSheet4U.com ZTB 500F 55 Frequency acc

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PSBT10120LFCT ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER Voltage 120 V Current 10 A Features  Ideal for automated placement  Ultra low forward vo

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SBT1820 … SBT1860 SBT1820 … SBT1860 Schottky Barrier Rectifier Diodes Schottky-Gleichrichterdioden IFAV = 18 A VF1 < 0.50 V Tjmax = 150°C VRRM = 20

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TESTING 4,000 V BREAKDOWN VOLTAGE DS RELAYS DS-BT RELAYS FEATURES 20.65 .813 10.65 .419 10.5 .413 •4,000 V breakdown voltage •Reinforced insulatio

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TESTING 4,000 V BREAKDOWN VOLTAGE DS RELAYS DS-BT RELAYS FEATURES 20.65 .813 10.65 .419 10.5 .413 •4,000 V breakdown voltage •Reinforced insulatio

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Semiconductor SBT2222F NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • L

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