SC453 Datasheet | Specifications & PDF Download

Power Transistors 2SC4533 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 10.0±0.2 5.5±0.2 Unit: mm 4.2±0

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isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4537 DESCRIPTION ·Low Noise NF = 1.6 dB TYP., @VCE = 5 V, IC = 5 mA, f = 900 MHz ·High Power

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4533 DESCRIPTION · ·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·Wide Ar

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www.datSasaheveat4nu.tcIoCm Semiconductor Silicon NPN Power Transistors Product Specification 2SC4538 DESCRIPTION ·With TO-3PML package ·High voltag

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Power Transistors 2SC4533 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 10.0±0.2 5.5±0.2 Unit: mm 4.2±0

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2SC4537 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4537 Absolute Max

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DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4536 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4536 is designed

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www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4531 DESCRIPTION ·With TO-3P(H)IS package ·High

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www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High speed switc

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4539 Power Amplifier Applications Power Switching Applications 2SC4539 Unit: mm · Low

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4531 DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Low saturation voltage ·B

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isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4536 DESCRIPTION ·Low Noise NF = 1.5 dB TYP. @VCE = 10 V, IC = 10 mA, f = 1 GHz ·Low Distort

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www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4538 DESCRIPTION ·With TO-3PML package ·High vo

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SMD Type NPN Transistors 2SC4539 Transistors ■ Features ● Low saturation voltage ● High speed switching time ● Small flat package ● PC = 1.0 to 2.0

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2SC4537 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier REJ03G0727-0300 (Previous ADE-208-1110A) Rev.3.00 Aug.10.2005 Outline RENES

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For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-733-1700 972-381-9991 Fax http://www.collmer.com

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4539 Power Amplifier Applications Power Switching Applications 2SC4539 Unit: mm · Low

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min.) ·High Switching Speed ·High Reliabilit

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Portable, VID Programmed Single Phase Power Supply Controller POWER MANAGEMENT Description The SC453 IC is a single chip high-performance Hysteretic P

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