SC5022 Datasheet | Specifications & PDF Download

2SC5022 Silicon NPN Triple Diffused Application High voltage amplifier Features • High breakdown voltage V (BR)CEO = 1500 V Min Outline TO-220FM w

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. Th

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSC5022 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)C

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SC50xx Series SMD High Current Inductor C O M P LI A N T R oH S Features: z z z z z z z 0.50” package SMD inductor up to 80 Amp (Imax Ideally for DC

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2SC5022 Silicon NPN Triple Diffused Application High voltage amplifier Features • High breakdown voltage V (BR)CEO = 1500 V Min Outline TO-220FM 1

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SC50xx Series SMD High Current Inductor C O M P LI A N T R oH S Features: z z z z z z z 0.50” package SMD inductor up to 80 Amp (Imax Ideally for DC

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SC50xx Series SMD High Current Inductor C O M P LI A N T R oH S Features: z z z z z z z 0.50” package SMD inductor up to 80 Amp (Imax Ideally for DC

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