SC600 Datasheet | Specifications & PDF Download

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6000 High Speed Switching Applications DC-DC Converter Applications 2SC6000 Unit: mm • High DC curr

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2SC6000 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6000 High Speed Switching Applications DC-DC Converter Applications • • • High DC current ga

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ASC600N1200MED 1200V SiC MOSFET Module Features • High Temperature, Humidity, and Bias Operation • Ultra Low Loss • High-Frequency Operation • Zero T

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W W W.Microsemi .C O M WATERTOWN DIVISION PRELIMINARY UPSC200/UPSC400/UPSC600 Silicon Carbide Schottky Rectifiers PRODUCT PREVIEW DESCRIPTION In M

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BSC600N25NS3 G MOSFET OptiMOSTM 3 Power-Transistor, 250 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very l

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DSC60XX Ultra-Small, Ultra-Low Power MEMS Oscillator Features • Wide Frequency Range: 2 kHz to 80 MHz • Ultra-Low Power Consumption: 1.3 mA/12 A (A

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BSC600N25NS3 G MOSFET OptiMOSTM 3 Power-Transistor, 250 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very l

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mAhXLife LED Driver with 5.0V, 4.5V, www.DataSheet4U.com or 4.0V Output TM SC600 POWER MANAGEMENT Description The SC600 is a versatile charge pump d

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DSC60XX Ultra-Small, Ultra-Low Power MEMS Oscillator Features • Wide Frequency Range: 2 kHz to 80 MHz • Ultra-Low Power Consumption: 1.3 mA/12 A (A

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Features  P-Channel  Enhancement mode  Fast Switching  Pb-free lead plating; RoHS compliant VSC600P10MS -100V/-1.3A P-Channel Advanced Power MOSF

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XP60SC600DH Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Low trr / Qrr ▼ Simple Drive Requirement G ▼ RoH

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