C6000 Datasheet - Toshiba Semiconductor

C6000 2SC6000

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6000 High Speed Switching Applications DC-DC Converter Applications 2SC6000 Unit: mm High DC current gain: hFE = 250 to 400 (IC = 2.5 A) Low collector-emitter saturation: VCE (sat) = 0.18 V (max) High speed switching: tf = 13 ns (typ) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collec.

C6000-ToshibaSemiconductor.pdf