SCD Datasheet | Specifications & PDF Download

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USCD032H THRU USCD034H FEATURES * Halogen-free type * Lead free product , compliance to RoHs * Lead less chip form , no lead damage * Lead-free solder

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SMD Unshielded Power Inductors - SCD Series SCD Series Features  RoHS compliant  High saturation open type wire wound power inductor  Suitable for

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USCD012 THRU USCD014 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 100 mA D ED T TE N N E E T T A A P P

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USCD032H THRU USCD034H FEATURES * Halogen-free type * Lead free product , compliance to RoHs * Lead less chip form , no lead damage * Lead-free solder

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ZOWIE Schottky Barrier Diode USCD032H THRU USCD034H FEATURES * Halogen-free type * Compliance to RoHS product * Lead less chip form, no lead damage

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USCD022 THRU USCD024 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 200 mA D ED T TE N N E E T T A A P P

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Silan Microelectronics SCDP120R040NP4B_Datasheet 40mΩ, 1200V SiC MOS POWER TRANSISTOR DESCRIPTION SCDP120R040NP4B is an N-channel enhancement mode

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WIRELESS, RF, AND CABLE Jun 01, 2001 TD-SCDMA Radio Chipset Block Diagram for Handset Application China option for 3G cellular phone is the TD-SCDMA

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ZOWIE Schottky Barrier Diode USCD032H THRU USCD034H FEATURES * Halogen-free type * Compliance to RoHS product * Lead less chip form, no lead damage

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USCD022 THRU USCD024 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 200 mA D ED T TE N N E E T T A A P P

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Product Specification SPECIFICATION FOR APPROVAL LC420WUN ( ) Preliminary Specification ( ● ) Final Specification Title 42.0” WUXGA TFT LCD BUYER

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SMD Shielded Power Inductors - SCDS Series SCDS 103R/ 104R/ 105R Shape and Dimensions Recommended Pattern Dimensions in mm Dimension in mm TYPE

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 2.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance

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GS88237CB-xxxIV 119-Bump BGA Industrial Temp 256K x 36 9Mb SCD/DCD Sync Burst SRAM 250 MHz–200 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Features

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IXKF 40N60SCD1 CoolMOS™ 1) Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PAC™ 5 Preliminary

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ACPM-7886 TD-SCDMA Power Amplifier www.DataSheet4U.com Data Sheet General Description The ACPM-7886 is an amplifier module designed for TD-SCDMA ap

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TSCDH30065G1 Taiwan Semiconductor 30A, 650V SiC Merged PIN Schottky Diode FEATURES ● Max junction temperature 175°C ● MPS structure for high ruggedn

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SUPERFAST RECOVERY DOUBLER AND CENTER TAPS January 9, 1998 SCDAS05FF - SCDAS15FF SCNAS05FF - SCNAS15FF SCPAS05FF - SCPAS15FF TEL:805-498-2111 FAX:80

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