SD1411 RF & MICROWAVE TRANSISTORS HF SSB APPLICATI.
ST Microelectronics
SD1411 - RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
SD1411 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . . . 30 MHz 40 VOLTS IMD − 30 dB COMMON EMITTER GOLD METALLIZATION POUT = 200 W MIN. WI.
Toshiba
2SD1411 - NPN Transistor
: 2SD1411 SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES . Low Saturation Voltage : .
Toshiba Semiconductor
2SD1411A - NPN Transistor
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications 2SD1411A Unit: mm • Lo.
SavantIC
2SD1411 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1411 www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·Low sa.
SavantIC
D1411 - 2SD1411
SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1411 DESCRIPTION www.dat·aWshiethet4TuO.co-2m20Fa package ·Low saturat.
Toshiba
D1411A - 2SD1411A
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications 2SD1411A Unit: mm • Lo.
INCHANGE
2SD1411 - NPN Transistor
isc Silicon NPN Power Transistor 2SD1411 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 4A ·Collector-Emitter Breakdown Vo.