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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD2394 DESCRIPTION www.dat·aWshiethet4TuO.co-2m20F package ·Low collecto

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD2058 DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 ·Lo

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FSD22A IC Feasta FSD22A800VMOSFET， 。，，，。 ；EMI。， 。  800VMOSFET   85~265VAC  2 3 4  10W   EMI     （OCP） DIP8 

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2SD2499 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2499 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TVs Unit: mm z High Voltage : VCBO

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SM1520SD2 thru SM15200SD2 Schottky Barrier Rectifiers .416(10.69) .376(9.65) 3 .188(4.83) .170(4.37) .054(1.40) .044(1.14) 1 MAX0.005(1.3) .619(1

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DATA SHEET SILICON POWER TRANSISTOR www.DataSheet4U.com 2SD2162 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AM

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isc Silicon NPN Power Transistor DESCRIPTION ·High speed. ·High breakdown voltage(VCBO=1500V). ·High reliability(Adoption of HVP process). ·Minimum L

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SM1520SD2 thru SM15200SD2 Schottky Barrier Rectifiers .416(10.69) .376(9.65) 3 .188(4.83) .170(4.37) .054(1.40) .044(1.14) 1 MAX0.005(1.3) .619(1

(111 views)

SM1520SD2 thru SM15200SD2 Schottky Barrier Rectifiers .416(10.69) .376(9.65) 3 .188(4.83) .170(4.37) .054(1.40) .044(1.14) 1 MAX0.005(1.3) .619(1

(110 views)

SM1520SD2 thru SM15200SD2 Schottky Barrier Rectifiers .416(10.69) .376(9.65) 3 .188(4.83) .170(4.37) .054(1.40) .044(1.14) 1 MAX0.005(1.3) .619(1

(108 views)

SM1520SD2 thru SM15200SD2 Schottky Barrier Rectifiers .416(10.69) .376(9.65) 3 .188(4.83) .170(4.37) .054(1.40) .044(1.14) 1 MAX0.005(1.3) .619(1

(107 views)

SM1520SD2 thru SM15200SD2 Schottky Barrier Rectifiers .416(10.69) .376(9.65) 3 .188(4.83) .170(4.37) .054(1.40) .044(1.14) 1 MAX0.005(1.3) .619(1

(107 views)

SM1520SD2 thru SM15200SD2 Schottky Barrier Rectifiers .416(10.69) .376(9.65) 3 .188(4.83) .170(4.37) .054(1.40) .044(1.14) 1 MAX0.005(1.3) .619(1

(106 views)

SM1520SD2 thru SM15200SD2 Schottky Barrier Rectifiers .416(10.69) .376(9.65) 3 .188(4.83) .170(4.37) .054(1.40) .044(1.14) 1 MAX0.005(1.3) .619(1

(106 views)

UMW PESD2IVN24 1.Description The PESD2IVN24 is a Transient Voltage Suppressor Arrays that designed to protect components which are connected to data

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SM1520SD2 thru SM15200SD2 Schottky Barrier Rectifiers .416(10.69) .376(9.65) 3 .188(4.83) .170(4.37) .054(1.40) .044(1.14) 1 MAX0.005(1.3) .619(1

(104 views)

www.DataSheet.co.kr 2SD2498 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2498 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY

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Power Transistors 2SD2139 Silicon NPN triple diffusion planar type For high-current amplification ratio, power amplification Unit: mm s Features 13.

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage:

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SavantIC Semiconductor Silicon NPN Darlington Power Transistors Product Specification 2SD2493 DESCRIPTION www.dat·aWshiethet4TuO.co-3mPN package ·Co

(80 views)