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SD2 Matched Datasheet




Part Number Description Manufacture
D2394
2SD2394
ge IC=50µA ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=50µA ;IC=0 VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A VBEsat Base-emitter saturation voltage IC=2A ;IB=0.2A ICBO Collector cut-off current VCB=60V; IE=0 IEBO Emitte

SavantIC
D1275
2SD2715

• High forward current transfer ratio hFE
• High-speed switching
• Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

Panasonic Semiconductor
D2012
2SD2012
olute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and

Toshiba Semiconductor
D2462
2SD2462
solute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and es

Toshiba Semiconductor
D2058
2SD2058
t Collector-emitter saturation voltage IC=2A ;IB=0.2A VBE Base-emitter on voltage IC=0.5A;VCE=5V ICBO Collector cut-off current VCB=60V;IE=0 IEBO Emitter cut-off current VEB=7V; IC=0 hFE DC current gain IC=0.5A ; VCE=5V fT Transition fr

Savant
D2498
2SD2498
ARACTERISTICS (Tc = 25°C) 2SD2498 CHARACTERISTIC Collector Cut−off Current Emitter Cut−off Current Collector−Emitter Breakdown Voltage DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Transition Frequency Co

Toshiba Semiconductor
D2088
2SD2088
decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor

Toshiba Semiconductor
D2137
2SD2137
q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 s Absolute Maximum Ratings Parameter C

Panasonic Semiconductor
2SD2010
NPN Transistor

ROHM
D2136
2SD2136
3.8±0.2 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2
■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector curr

Panasonic Semiconductor

Total 1652 results






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