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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD2394 DESCRIPTION www.dat·aWshiethet4TuO.co-2m20F package ·Low collecto

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2SD2499 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2499 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TVs Unit: mm z High Voltage : VCBO

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD2058 DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 ·Lo

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FSD22A IC Feasta FSD22A800VMOSFET， 。，，，。 ；EMI。， 。  800VMOSFET   85~265VAC  2 3 4  10W   EMI     （OCP） DIP8 

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www.DataSheet.co.kr 2SD2498 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2498 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage:

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SavantIC Semiconductor Silicon NPN Darlington Power Transistors Product Specification 2SD2493 DESCRIPTION www.dat·aWshiethet4TuO.co-3mPN package ·Co

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Equivalent circuit C Darlington 2SD2494 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=110V VEB=

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Free Datasheet http://www.datasheet-pdf.com/ Free Datasheet http://www.datasheet-pdf.com/ Free Datasheet http://www.datasheet-pdf.com/

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1 2 3 4 5 6 7 8 9 A B Dimensions (in/mm) A A’ B .643 .666 .984 09/09 16.33 16.92 24.99 .971 .994 1.311 15/15 24.66 25.25 33.32 1.511 1.534

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ESD249-B1-W0201 Bi-directional ESD protection device, 18 V, 4.2 pF, 0201 Product description This Infineon ESD (electrostatic discharge) protection de

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PESD2CANFD54LT-Q ESD protection for in-vehicle networks 23 January 2025 Product data sheet 1. General description ESD protection device in a small S

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DATA SHEET SILICON POWER TRANSISTOR www.DataSheet4U.com 2SD2162 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AM

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Power Transistors 2SD2139 Silicon NPN triple diffusion planar type For high-current amplification ratio, power amplification Unit: mm s Features 13.

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Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N60D/F/S/FJD/T/KD2 is an N

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SSD2504-VB SSD2504-VB Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.114 at VGS = 10 V ID (A) 1

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ESD245-B1-W0201 Bi-directional ESD protection device, 5.5 V, 5.8 pF, 0201 Product description This Infineon ESD (electrostatic discharge) protection

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2253 www.datasheet4u.com DESCRIPTION ·With TO-3P(H)IS package ·Buil

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