| Part Number | Description | Manufacture |
|---|---|---|
|
|
2SD2394 ge IC=50µA ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=50µA ;IC=0 VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A VBEsat Base-emitter saturation voltage IC=2A ;IB=0.2A ICBO Collector cut-off current VCB=60V; IE=0 IEBO Emitte |
 SavantIC |
|
|
2SD2715 • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) |
 Panasonic Semiconductor |
|
|
2SD2012 olute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and |
 Toshiba Semiconductor |
|
|
2SD2462 solute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and es |
Toshiba Semiconductor |
|
|
2SD2058 t Collector-emitter saturation voltage IC=2A ;IB=0.2A VBE Base-emitter on voltage IC=0.5A;VCE=5V ICBO Collector cut-off current VCB=60V;IE=0 IEBO Emitter cut-off current VEB=7V; IC=0 hFE DC current gain IC=0.5A ; VCE=5V fT Transition fr |
 Savant |
|
|
2SD2498 ARACTERISTICS (Tc = 25°C) 2SD2498 CHARACTERISTIC Collector Cut−off Current Emitter Cut−off Current Collector−Emitter Breakdown Voltage DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Transition Frequency Co |
Toshiba Semiconductor |
|
|
2SD2088 decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor |
Toshiba Semiconductor |
|
|
2SD2137 q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 s Absolute Maximum Ratings Parameter C |
Panasonic Semiconductor |
|
|
NPN Transistor |
 ROHM |
|
|
2SD2136 3.8±0.2 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector curr |
Panasonic Semiconductor |
| Total 1652 results |
