D2162 2SD2162

NEC

Description

DATA SHEET SILICON POWER TRANSISTOR www.DataSheet4U.com 2SD2162 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AM.
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.

📥 Download Datasheet

D2162 Datasheet Preview — Preview of D2162 PDF

Datasheet Specifications

Part number: D2162
Manufacturer: NEC
File Size: 145.74 KB
Datasheet: D2162_NEC.pdf
Description: 2SD2162

Features

* High hFE due to Darlington connection hFE ≥ 2,000 (VCE = 2.0 V, IC = 3.0 A)
* Full mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base vol

Applications

* of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and v

D2162 Distributors

📁 Related Datasheet

D2100 D2101 D2101S D2102 D2103 D2103S

📌 All Tags

D2162 2SD2162 NEC

NEC D2162-like datasheet

D2161