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D2162

2SD2162

D2162 Features

* High hFE due to Darlington connection hFE ≥ 2,000 (VCE = 2.0 V, IC = 3.0 A)

* Full mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base vol

D2162 General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full r.

D2162 Datasheet (145.74 KB)

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Datasheet Details

Part number:

D2162

Manufacturer:

NEC

File Size:

145.74 KB

Description:

2sd2162.
DATA SHEET SILICON POWER TRANSISTOR www.DataSheet4U.com 2SD2162 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AM.

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D2162 2SD2162 NEC

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