D2101 Datasheet - Hitachi Semiconductor

D2101 2SD2101

2SD2101 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 12 3 3 kΩ (Typ) 150 Ω (Typ) 3 2SD2101 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg 1 Ratin.

D2101-HitachiSemiconductor.pdf