2SD2689 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Minimum Lot-to-Lot variations for robus.

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Datasheet Specifications

Part number: 2SD2689
Manufacturer: Inchange Semiconductor
File Size: 208.85 KB
Datasheet: 2SD2689-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for Color TV Horizontal Deflection Output Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Coll

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2SD2689 Silicon NPN Power Transistor Inchange Semiconductor

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