Datasheet Details
- Part number
- 2SD2642
- Manufacturer
- Inchange Semiconductor
- File Size
- 214.95 KB
- Datasheet
- 2SD2642_InchangeSemiconductor.pdf
- Description
- Silicon NPN Darlington Power Transistor
2SD2642 Description
isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V(Min).
High DC Current Gain-
: hFE= 5000( Min.
Low Collector Sa.
2SD2642 Applications
* Designed for audio, series regulator and general
purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
110
V
VCEO
Collector-Emitter Voltage
110
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
IB
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