2SD2642 Silicon NPN Darlington Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min). High DC Current Gain- : hFE= 5000( Min. Low Collector Sa.

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Datasheet Specifications

Part number: 2SD2642
Manufacturer: Inchange Semiconductor
File Size: 214.95 KB
Datasheet: 2SD2642_InchangeSemiconductor.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Designed for audio, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB

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2SD2642 Silicon NPN Darlington Power Transistor Inchange Semiconductor

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