2SD2633 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain- : hFE = 2000(Min)@ IC= 6A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min). Low Collector-Emitter Sat.

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Datasheet Specifications

Part number: 2SD2633
Manufacturer: Inchange Semiconductor
File Size: 209.31 KB
Datasheet: 2SD2633-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A

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Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD2633-like datasheet