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2SD2636 Datasheet - Toshiba

2SD2636 Silicon NPN Triple Diffused Type Transistor

2SD2636 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2636 Power Amplifier Applications High-Power Switching Applications High-breakdown voltage: VCEO = 160 V (min) Complementary to 2SB1682 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristic S Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse I.

2SD2636-Toshiba.pdf

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Datasheet Details

Part number:

2SD2636

Manufacturer:

Toshiba ↗

File Size:

314.83 KB

Description:

Silicon npn triple diffused type transistor.

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2SD2636 2SD2636 Silicon NPN Triple Diffused Type Transistor Toshiba

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