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2SD2636 - Silicon NPN Triple Diffused Type Transistor

2SD2636 Description

2SD2636 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2636 Power Amplifier Applications High-Power Switching A.

2SD2636 Applications

* High-Power Switching Applications
* High-breakdown voltage: VCEO = 160 V (min) Complementary to 2SB1682 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristic S Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector pow

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Datasheet Details

Part number
2SD2636
Manufacturer
Toshiba ↗
File Size
314.83 KB
Datasheet
2SD2636-Toshiba.pdf
Description
Silicon NPN Triple Diffused Type Transistor

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Silicon NPN Triple Diffused Type Transistor Toshiba
Toshiba 2SD2636-like datasheet