2SD2636 Silicon NPN Triple Diffused Type Transistor

Toshiba

Description

2SD2636 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2636 Power Amplifier Applications High-Power Switching A.

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Datasheet Specifications

Part number: 2SD2636
Manufacturer: Toshiba ↗
File Size: 314.83 KB
Datasheet: 2SD2636-Toshiba.pdf
Description: Silicon NPN Triple Diffused Type Transistor

Applications

* High-Power Switching Applications
* High-breakdown voltage: VCEO = 160 V (min) Complementary to 2SB1682 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristic S Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector pow

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2SD2636 Silicon NPN Triple Diffused Type Transistor Toshiba

Toshiba 2SD2636-like datasheet