2SD2688LS - NPN Triple Diffused Planar Silicon Transistor
2SD2688LS Features
* Package Dimensions unit : mm 2079D [2SD2688LS] 10.0 3.2 3.5 7.2 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.
