SF-BM-3 Datasheet | Specifications & PDF Download

FBM80N70P/B FBM@ N-Channel Enhancement Mode MOSFET Features • 70V/80A RDS(ON) = 6.0 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugg

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*Ro*H*AHSEACCL-OOQMG2PE0LN0IACFNORTME,EP&LIANT AUTOMOTIVE GRADE LEAD FREE Features n First pin auto-termination n Working voltage: 1000 VDC n Hi-Po

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AEC*-RQo2H0S0 aCnOdMPLIANT AUTOMOTIVE GRADE Features ■ Planar technology primarily for BMS signal applications ■ Working voltage: up to 1000 VDC ■ H

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FBM85N80P/B FBM@ N-Channel Enhancement Mode MOSFET Features • 80V/90A RDS(ON) = 7.0 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugg

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FBM85N80P/B FBM@ N-Channel Enhancement Mode MOSFET Features • 80V/90A RDS(ON) = 7.0 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugg

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VBM1606 N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 5 m 120 A Single FEATURES • 175 °C Junctio

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VBM165R02S / VBMB165R02S VBE165R02S / VBFB165R02S www.VBsemi.com /$IBOOFM
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Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)

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VBM1808 N-Channel 80 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration 80 V 7 mΩ 9 mΩ 100 A Single

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PK615BMA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 2.6Ω @VGS = 10V ID 0.45A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (

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Advanced Power Electronics Corp. AP1003BMP-3 N-channel Enhancement-mode Power MOSFET Lead(Pb)-free, Halogen-free Low Conductance Losses Fast Switchi

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FBM80N70P/B FBM@ N-Channel Enhancement Mode MOSFET Features • 70V/80A RDS(ON) = 6.0 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugg

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VBMB1607V1.6 N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.005 at VGS = 10 V 0.007at VGS = 4.5 V ID (A)a 120 100 FEATURES

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VBM1201K N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS =

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VBM2205M P-Channel 200V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -200 RDS(on) () VGS = -10 V 0.50 Qg max. (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27

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VBMB1401 N-Channel 40-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () 40 0.0014 at VGS = 10 V 0.0020at VGS = 4.5 V ID (A)a,

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VBMB2658 P-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.050 at VGS = - 10 V - 60 0.060 at VGS = - 4.5 V

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VBM2611 P-Channel 60V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.012 at VGS = - 10 V 0.015 at VGS = - 4.5 V

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P8503BMG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 85mΩ @VGS = 10V ID 2.4A SOT-23 ABSOLUTE MAXIMUM RAT

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VBMB2625 P-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.025 at VGS = - 10 V 0.030 at VGS = - 4.5 V ID

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VBMB165R16 N-Channel 650V (D-S) Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC)

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