* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Reduced switching and conduction losses
* Ultra low gate charge (Qg)
* Avalanche energy rated (UIS) APPLICATIONS
* Server and telecom power supplies
* Switch mode power suppl
VBMB165R16 Datasheet (313.57 KB)
VBMB165R16
VBsemi
313.57 KB
N-channel mosfet.
VBMB165R16 N-Channel 650V (D-S) Power MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) .
📁 Related Datasheet
VBMB165R10S N-Channel Power MOSFET (VBsemi)
VBMB165R02 N-Channel MOSFET (VBsemi)
VBMB165R02S N-Channel MOSFET (VBsemi)
VBMB165R22 N-Channel MOSFET (VBsemi)
VBMB1606 N-Channel MOSFET (VBsemi)
VBMB1607V1.6 N-Channel MOSFET (VBsemi)
VBMB1607V3 N-Channel MOSFET (VBsemi)
VBMB16I15 600V Trench and Fieldstop IGBT (VBsemi)
VBMB16R02S N-Channel MOSFET (VBsemi)
VBMB16R07S N-Channel MOSFET (VBsemi)
