VBMB165R02S Datasheet - VBsemi

VBMB165R02S N-Channel MOSFET

VBMB165R02S Features

* Isolated Package

* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)

* Sink to Lead Creepage Distance = 4.8 mm

* Dynamic dV/dt Rating

* Low Thermal Resistance

* Lead (Pb)-free Available Available RoHS

* COMPLIANT TO-220AB TO-220 FULLPAK

Datasheet Details

VBMB165R02S

VBsemi

533.53 KB

N-channel mosfet.

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