* Low Gate Charge Qg Results in Simple Drive Requirement
* Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS
* COMPLIANT
* Fully Characterized Capacitance and Avalanche Voltage and Current
* Compliant to RoHS directive 2002/95/EC TO-220 FULL
VBMB165R02 Datasheet (356.08 KB)
VBMB165R02
VBsemi
356.08 KB
N-channel mosfet.
VBMB165R02 N-Channel 650V (D-S) Power MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
650.
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