* Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS)
* Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-Of-Merit (FOM):
VBMB165R22 Datasheet (261.00 KB)
VBMB165R22
VBsemi
261.00 KB
N-channel mosfet.
VBMB165R22
N-Channel 650 V (D-S) Power MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) at 25 °C () Qg max. (nC) Qgs (nC) Qgd (nC.
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