VBMB165R22 Datasheet - VBsemi

VBMB165R22, N-Channel MOSFET

VBMB165R22 N-Channel 650 V (D-S) Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max.RDS(on) at 25 °C () Qg max.(nC) Qgs (nC) Qgd (nC.

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Datasheet Details

Part number:

VBMB165R22

Manufacturer:

VBsemi

File Size:

261.00 KB

Description:

N-Channel MOSFET

Features

* Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS)
* Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-Of-Merit (FOM):

Applications

* Consumer Electronics - Displays (LCD or Plasma TV
* Server and Telecom Power Supplies - SMPS
* Industrial - Welding, Induction Heating, Motor Drives
* Battery Chargers ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Vo

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VBMB165R22 N-Channel MOSFET VBsemi

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