VBMB165R22 - N-Channel MOSFET

VBsemi

Datasheet Details

Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS).
Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-Of-Merit (FOM): Ron x Qg - Fast Switching.

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Published: Oct 14, 2024 |