SF36 Datasheet | Specifications & PDF Download

                                 Main Product Characteristics: VDSS -30 V RDS(on) 10.6 mΩ(typ.) ID -12A Features and Benefits: SOP-8  „ Advanced

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SF31 THRU SF36 SUPER FAST RECTIFIER Reverse Voltage - 50 to 400 Volts Forward Current - 3.0 Amperes DO-201AD 0.210(5.3) 0.190(4.8) DIA. 1.0(25.4)

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SSF3626 www.DataSheet4U.com DESCRIPTION The SSF3626 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is

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DESCRIPTION The SSF3612E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.4V

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SEMICONDUCTOR TECHNICAL DATA SF31 ~ SF38 Super Fast Rectifiers Reverse Voltage 50V~600V, Forward Current 3.0Amp Low forward voltage drop High curre

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CREAT BY ART Glass Passivated Super Fast Rectifiers FEATURES - Glass passivated chip junction - High current capability, Low VF - High reliability - H

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Main Product Characteristics: VDSS -30 V RDS(on) 10.6 mΩ(typ.) ID -12A Features and Benefits:  Advanced trench MOSFET process technology  Speci

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DESCRIPTION The SSF3606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load sw

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SSF3605S 30V P-Channel MOSFET DESCRIPTION The SSF3605S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device

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SSF3612 30V N-Channel MOSFET DESCRIPTION The SSF3612 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is

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Features n Maximum Peak Power Dissipation: 7000 watts n Meets ISO7637-2 / ISO16750-2 Surge specification (varies by test condition) n RoHS

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6) 6) 9ROWDJH5DQJH WR 9 )RUZDUG&XUUHQW $PSHUH 683(5)$675(&29(5<5(&7,),(5 FEATURES ͈ Low coVt construction ͈ F

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TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The

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TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The

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W TE POWER SEMICONDUCTORS Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Ca

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DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS SF31 THRU SF38 TECHNICAL SPECIFICATIONS OF SUPER FAST RECTIFIER VOLTAGE RANGE - 50 to 600 Volts CU

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BL GALAXY ELECTRICAL SUPER FAST RECTIFIERS SF31---SF38 VOLTAGE RANGE: 50 --- 600 V CURRENT: 3.0 A FEATURES Low cost Low leakage Low forward voltage

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SF31 thru SF36 SUPER FAST RECTIFIER CHENG- YI ELECTRONIC SUPER FAST RECTIFIER VOLTAGE RANGE-50 to 400 Volts CURRENT-3.0 Amperese FEATURES High relia

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SUPER FAST RECOVERY RECTIFIER RoHS SF31(G)Thru SF38(G) 3.0 Amps FEATURES • Available in glass passivated chip junction with G suffix • Low forward

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