SI-8050S Datasheet | Specifications & PDF Download

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. IC = 0.8A. ƽEpitaxial planar ty

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UTC 8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC8050S is a low voltage high curre

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050S TRANSISTOR£¨NPN £© TO¡ª 92 FEATURES Power dissipat

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qSI-8000S Series SI-8000S Series Full-Mold, Separate Excitation Switching Type sFeatures • • • • • • • • Compact full-mold package (equivalent to TO

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SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURE Complementary to KTC8550S. L KTC8050S EPITAXIAL PLANAR NPN TRANSISTOR E B L 2 3 M

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SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURE Complementary to MPS8550SC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Co

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SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURE Complementary to MPS8550S. L MPS8050S EPITAXIAL PLANAR NPN TRANSISTOR E B L 2 3 M

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SMD Type NPN Transistors KST8050S SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 Collector Current: IC=0.5A 1 +0.1 0.95-0.1 +0

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1-1-2 Switching Mode Regulator ICs SI-8000SD Series ■Features • Surface-mount package (TO263-5) • Output current: 3.0A Surface Mount, Separate Excit

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NPN S I L I C O N T RA N S I S T O R www.DataSheet4U.com Shantou Huashan Electronic Devices Co.,Ltd. HC8050S █ APPLICATIONS Audio Frequency Amplif

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UNISONIC TECHNOLOGIES CO., LTD MMDT8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC MMDT805

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. IC = 0.8A. ƽEpitaxial planar ty

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Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR H8050S █ APPLICATIONS Audio Frequency Amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25

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EWE'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌƐ PRIMARY CHARACTERISTICS PC 300mW VCEO 25V IC 500mA hFE 200~350 TJ,Max 150℃ FEATURES  Collector Current: IC=0

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HI-SINCERITY MICROELECTRONICS CORP. HE8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050S is designed for general purpose amplifier applicat

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qSI-8000S Series SI-8000S Series Full-Mold, Separate Excitation Switching Type sFeatures • • • • • • • • Compact full-mold package (equivalent to TO

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www.DataSheet4U.com DC COMPONENTS CO., LTD. R DC8050S DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Descrip

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www.DataSheet4U.com CORPORATION G8050S Description Features N P N E P I TA X I A L T R A N S I S T O R LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRAN

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www.DataSheet4U.com Semiconductor STC8050SF NPN Silicon Transistor Descriptions • High current application • Radio in class B push-pull operation

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