SI1012 Datasheet | Specifications & PDF Download

LESHAN RADIO COMPANY, LTD. N-Channel 1.8-V (G-S) MOSFET FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Si

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N-Channel 1.8-V (G-S) MOSFET FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resis

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LESHAN RADIO COMPANY, LTD. N-Channel 1.8-V (G-S) MOSFET LSI1012XT1G S-LSI1012XT1G FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD

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MCC R Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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LESHAN RADIO COMPANY, LTD. N-Channel 1.8-V (G-S) MOSFET FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Si

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N-Channel 1.8-V (G-S) MOSFET FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resis

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LESHAN RADIO COMPANY, LTD. N-Channel 1.8-V (G-S) MOSFET LSI1012XT1G S-LSI1012XT1G FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD

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Si1012R/X New Product Vishay Siliconix N-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.70 @ VGS = 4.5 V 20 0.85 @ VGS = 2.5 V 1.2

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Si1010/1/2/3/4/5 Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240–960 MHz EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operati

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N-Channel 20 V (D-S) MOSFET Si1012CR Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.396 at VGS = 4.5 V 0.456 at VGS = 2.5 V 20 0.546 at

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Si1012R/X New Product Vishay Siliconix N-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.70 @ VGS = 4.5 V 20 0.85 @ VGS = 2.5 V 1.2

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