SI2302DS Datasheet | Specifications & PDF Download

Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.085 @ VGS = 4.5 V 20 0.115 @ VGS = 2.5 V ID (A) 2.

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SMD Type N-Channel Enhancement MOSFET SI2302DS (KI2302DS) ■ Features ● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A

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SMD Type N-Channel MOSFET SI2302DS-HF (KI2302DS-HF) ■ Features ● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A ● Pb−F

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SI2302DS-T1-GE3 www.VBsemi.com SI2302DS-T1-GE3 N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 a

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SI2302DS N-channel enhancement mode field-effect transistor Rev. 02 — 20 November 2001 M3D088 Product data 1. Description N-channel enhancement mode

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