SI2306 Datasheet | Specifications & PDF Download

Si2306 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive req

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Si2306DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 3.5 2.8 rDS(on) (W) 0.057 @ VGS = 10 V 0.094 @ VG

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MCC TM Micro Commercial Components Features
     omponents 20736 Marilla Street Chatsworth  # $ %

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SI2306 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 N MOS 。N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features , MOS 。 Trench FET Po

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- 0755-83307717 www.ping-web.com sales@ping-web.com Si2306BDS Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on)

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SI2306 20V N-Channel Enhancement Mode MOSFET Features VDS (V) = 20 V ID = 2.8 A RDS(ON) = 60mΩ @ VGS = 4.5V RDS(ON) = 70mΩ @ VGS = 2.5V Features Adva

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UMW SI2306A 30V N-ChanneI MOSFET 1.Description The SI2306A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operatio

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