SI2315BDS Datasheet | Specifications & PDF Download

isc P-Channel MOSFET Transistor Si2315BDS ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤52mΩ@VGS= -4.5V; ID= -3.8A ·Enhancement mode ·Fast

Rating: 1 ★ (4 votes)

P-Channel 1.8-V (G-S) MOSFET Si2315BDS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.050 at VGS = - 4.5 V - 12 0.065 at VGS = - 2.5 V 0

Rating: 1 ★ (2 votes)