SI2315BDS Datasheet | Specifications & PDF Download

isc P-Channel MOSFET Transistor Si2315BDS ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤52mΩ@VGS= -4.5V; ID= -3.8A ·Enhancement mode ·Fast

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P-Channel 1.8-V (G-S) MOSFET Si2315BDS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.050 at VGS = - 4.5 V - 12 0.065 at VGS = - 2.5 V 0

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