SK12 ... SK115 SK12 ... SK115 SMD Schottky Barrie.
Hitachi Semiconductor
2SK1151L - Silicon N-Channel MOSFET
2SK1151(L)(S), 2SK1152(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switch.
Renesas
2SK1158 - Silicon N-Channel MOSFET
2SK1157, 2SK1158 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive curr.
Hitachi Semiconductor
2SK1154 - Silicon N-Channel MOSFET
2SK1153, 2SK1154 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv.
Hitachi Semiconductor
2SK1155 - Silicon N-Channel MOSFET
2SK1155, 2SK1156 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv.
Hitachi Semiconductor
2SK1156 - Silicon N-Channel MOSFET
2SK1155, 2SK1156 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv.
Hitachi Semiconductor
2SK1158 - Silicon N-Channel MOSFET
2SK1157, 2SK1158 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv.
Renesas
2SK1155 - Silicon N Channel MOSFET
2SK1155, 2SK1156 Silicon N Channel MOS FET REJ03G0909-0200 (Previous: ADE-208-1247) Rev.2.00 Sep 07, 2005 Application High speed power switching Fea.
Renesas
2SK1159 - Silicon N-Channel MOSFET
2SK1159, 2SK1160 Silicon N Channel MOS FET REJ03G0911-0200 (Previous: ADE-208-1249) Rev.2.00 Sep 07, 2005 Application High speed power switching Fea.
Hitachi Semiconductor
K1154 - 2SK1154
2SK1153, 2SK1154 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive curr.
Renesas
2SK1157 - Silicon N-Channel MOSFET
2SK1157, 2SK1158 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive curr.
Leiditech
S-DSK115 - SCHOTTKY BARRIER RECTIFIER
DSK12~DSK120 S-DSK12~S-DSK120 Features ● Low profile package ● Ideal for automated placement ● Low power losses, high efficiency ● Low forward voltag.
Hitachi Semiconductor
2SK1151 - Silicon N-Channel MOSFET
2SK1151(L)(S), 2SK1152(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switch.
Hitachi Semiconductor
2SK1151S - Silicon N-Channel MOSFET
2SK1151(L)(S), 2SK1152(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switch.
Hitachi Semiconductor
2SK1152 - Silicon N-Channel MOSFET
2SK1151(L)(S), 2SK1152(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switch.
Hitachi Semiconductor
2SK1152L - Silicon N-Channel MOSFET
2SK1151(L)(S), 2SK1152(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switch.
Hitachi Semiconductor
2SK1152S - Silicon N-Channel MOSFET
2SK1151(L)(S), 2SK1152(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switch.
Hitachi Semiconductor
2SK1153 - Silicon N-Channel MOSFET
2SK1153, 2SK1154 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv.
Hitachi Semiconductor
2SK1157 - Silicon N-Channel MOSFET
2SK1157, 2SK1158 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv.
Hitachi Semiconductor
2SK1159 - Silicon N-Channel MOSFET
2SK1159, 2SK1160 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv.
Diotec Semiconductor
SK115 - SMD Schottky Barrier Rectifier Diodes
SK12 SK115 SK12 SK115 SMD Schottky Barrier Rectifier Diodes SMD Schottky-Gleichrichterdioden Version 2017-01-26 ~ SMA / ~ DO-214AC 5± 0.2 .