SK16 Datasheet | Specifications & PDF Download

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2SK168 Silicon N-Channel Junction FET Application VHF Amplifier, Mixer, Local oscillator Outline TO-92 (2) 1. Gate 2. Source 3. Drain 3 2 1 Free D

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1603 DESCRIPTION ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source

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2SK168 Silicon N-Channel Junction FET Application VHF Amplifier, Mixer, Local oscillator Outline TO-92 (2) 1. Gate 2. Source 3. Drain 3 2 1 2SK168

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2SK1622(L), 2SK1622(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low dri

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isc N-Channel MOSFET Transistor 2SK1692 DESCRIPTION ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) ·Minimum Lot-to-Lot variat

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS=500 (Min) ·Minimum Lot-to-Lot variations for

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isc N-Channel MOSFET Transistor 2SK1605 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Minimum Lot-to-Lot variat

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS=700V(Min) ·Minimum Lot-to-Lot variations for

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2SK1647(L), 2SK1647(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo

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2SK1622(L), 2SK1622(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low dri

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Minimum Lot-to-Lot variations for

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isc N-Channel MOSFET Transistor 2SK1614 DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variat

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2SK1620(L), 2SK1620(S) Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low driv

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2SK1620(L), 2SK1620(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low dri

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS=700V(Min) ·Minimum Lot-to-Lot variations for

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