SK17 Datasheet | Specifications & PDF Download

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 2SK170 Low Noise Audio Amplifier Applications Unit: mm • Recommended for fi

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Ordering number:EN3822 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. N-Channel Silicon MOSFE

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LSK170 A/B/C/D Quality Through Innovation Since 1987 High Input Impedance, Ultra-Low Noise, Single N-Channel JFET Ultra-Low Noise at Both High & Low F

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LSK170 A/B/C/D Quality Through Innovation Since 1987 High Input Impedance, Ultra-Low Noise, Single N-Channel JFET Ultra-Low Noise at Both High & Low F

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2SK1773 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No

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LSK170 A/B/C/D Quality Through Innovation Since 1987 High Input Impedance, Ultra-Low Noise, Single N-Channel JFET Ultra-Low Noise at Both High & Low F

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Ordering number:EN3820 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. N-Channel Silicon MOSFE

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LSK170 A/B/C/D Quality Through Innovation Since 1987 High Input Impedance, Ultra-Low Noise, Single N-Channel JFET Ultra-Low Noise at Both High & Low F

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Ordering number:EN3831 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. N-Channel Silicon MOSFET 2SK1736 Ultrahigh-Spe

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2SK1761 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current

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isc N-Channel MOSFET Transistor 2SK1745 DESCRIPTION ·Drain Current ID=18A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Fast Switching Speed ·Min

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2SK1762 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • Low on-resistance High speed switch

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LSK170 A/B/C/D Quality Through Innovation Since 1987 High Input Impedance, Ultra-Low Noise, Single N-Channel JFET Ultra-Low Noise at Both High & Low F

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isc N-Channel MOSFET Transistor 2SK1707 DESCRIPTION ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·M

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isc N-Channel MOSFET Transistor 2SK1704 DESCRIPTION ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Fast Switching Speed ·Min

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Ordering number:EN3824 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. N-Channel Silicon MOSFE

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2SK1775 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current

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