SK12-L THRU SK110-L Features • Lead Free Finish.
Texas Instruments
SK18752 - 20W Audio Power Amplifier
LM1875 www.ti.com SNAS524A – MAY 2004 – REVISED MAY 2004 LM1875 20W Audio Power Amplifier Check for Samples: LM1875 FEATURES 1 •2 Up to 30 Watts O.
Hitachi Semiconductor
2SK1807 - N-Channel MOSFET
2SK1807 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current.
Fuji Electric
2SK1821-01M - N-channel MOS-FET
2SK1821-01M FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant.
Renesas
2SK1807 - Silicon N-Channel MOSFET
2SK1807 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No .
Inchange Semiconductor
2SK1805 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK1805 DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Fast Switching Speed ·Min.
Sanyo
K1841 - 2SK1841
Ordering number:EN4636 N-Channel Enhancement Silicon MOSFET 2SK1841 Ultrahigh-Speed Switching, Analog Switch Applications Features · Largeyfs. · E.
Toshiba
2SK1805 - Field Effect Transistor
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .
Toshiba
K1875 - 2SK1875
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK1875 High Frequency Amplifier Applications AM High Frequency Amplifier Applications.
Toshiba
2SK18 - Silicon N-Channel Transistor
: SILICON N CHANNEL JUNCTION DUAL TYPE (COMPLETELY SEPARATED TYPE) DIFFERENTIAL AMPLIFIER APPLICATIONS. FEATURES • Low Offset : VgS1 VgS2 =10mV (Max.).
Hitachi Semiconductor
2SK1809 - N-Channel MOSFET
2SK1809 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current.
Fuji Electric
2SK1821-01MR - N-channel MOS-FET
2SK1821-01MR FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran.
Toshiba Semiconductor
2SK1826 - N-Channel MOSFET
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1826 High Speed Switching Applications Analog Switch Applications · 4 V gate drive · Lo.
Toshiba Semiconductor
2SK1827 - N-Channel MOSFET
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1827 High Speed Switching Applications Analog Switch Applications · 4 V gate drive · Lo.
Sanyo Semicon Device
3SK180 - High-Frequency General-Purpose Amp Applications
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Inchange Semiconductor
2SK1809 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fast Switching Speed ·Low on-resis.
Panasonic
2SK1803 - Silicon N-Channel MOSFET
Power F-MOS FETs 2SK1803 Silicon N-Channel Power F-MOS FET s Features q Avalanche capacity guaranteed: EAS > 60mJ q VGSS = ±30V guaranteed q High-spee.
Yoshino International
2SK183 - (2SK180 - 2SK183) Power FET
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .
Yoshino International
2SK180 - Power FET
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .
Toshiba
K1805 - 2SK1805
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .
Sanyo
K1897 - 2SK1897
Ordering number:EN4208 N-Channel Silicon MOSFET 2SK1897 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switc.