SL23-M Datasheet | Specifications & PDF Download

Schottky Barrier Rectifiers Production specification SL22F--SL245F Features  Metal silicon junction, majority carrier conduction  High surge capab

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AiT Semiconductor Inc. WSL www.ait-ic.com WIRE WOUND SMD INDUCTOR ●FEATURE 1. High performance (Isat) realized by metal dust core. 2. Low loss rea

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PD- 93904A SMPS MOSFET IRFB23N20D IRFS23N20D IRFSL23N20D HEXFET® Power MOSFET l Applications High frequency DC-DC converters VDSS 200V RDS(on) m

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PD - 95535 SMPS MOSFET IRFB23N15DPbF IRFS23N15DPbF IRFSL23N15DPbF HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free

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PD - 95536 SMPS MOSFET IRFB23N20DPbF IRFS23N20DPbF IRFSL23N20DPbF HEXFET® Power MOSFET Applications High frequency DC-DC converters l Lead-Free l

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N-Channel Power MOSFET General Features ● VDS = 20V,ID = 2.8 A RDS(ON) < 85mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V ● High power and current handing ca

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SL22 THRU SL24 LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE - 20 to 40 Volts CURRENT - 2.0 Amperes FEATURES l l l l l l l l l l Plastic pac

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www.vishay.com SL22, SL23 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier DO-214AA (SMB) FEATURES • Low profile package • Id

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Low VF Chip Schottky Barrier Rectifier SL22 THRU SL24 Crownpo Technology 2.0A Surface Mount Schottky Barrier Rectifiers - 20V-40V Features • Batch p

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Features * Ideal for automated placement * Low forward voltage drop * Low leakage current * Meets environmental standard MIL-S-19500D * Moisture sensi

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PD - 95535 SMPS MOSFET IRFB23N15DPbF IRFS23N15DPbF IRFSL23N15DPbF HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free

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SL2304NZ Low Jitter and Skew DC to 140MHz Clock Buffer Key Features • DC to 140 MHz operating frequency range • Low output clock skew: 50ps-typ • Lo

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ISL23448 NOT RECOMMENDED FOR NEW DESIGNS RECOMMENDED REPLACEMENT PART ISL23428 Quad, 128 Tap, Low Voltage Digitally Controlled Potentiometer (XDCP™)

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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-262 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to

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FSL230D, FSL230R June 1998 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Inte

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FSL230D, FSL230R June 1998 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Inte

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FSL234D, FSL234R June 1998 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Inte

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FSL234D, FSL234R June 1998 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Inte

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FSL23A0D, FSL23A0R Data Sheet June 1999 File Number 4476.2 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discr

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