SLOT Datasheet | Specifications & PDF Download

3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 1,024 x 1,024 FEATURES: • • IDT72V70210 32 serial input and output streams 1,024 x 1,024 channel non-b

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3.3 VOLT Time SLOT INTERCHANGE DIGITAL SWITCH 1,024 x 1,024 IDT72V70810 DATASHEET FEATURES: • 1,024 x 1,024 channel non-blocking switching at 8.192

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www.DataSheet4U.com 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128 FEATURES: • • • • • • • • • • • IDT72V8988 128 x 128 channel non-blocki

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SLOTTED PHOTOINTERRUPTER Description The MIT-5A117 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a

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SA8702 sames DESCRIPTION The SA8702 (BMTSAC) is a Block Mode Time Slot Allocation Circuit. The device is used to generate 8 consecutive timeslots in

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MIC2590B Micrel MIC2590B Dual-Slot PCI Hot Plug Controller Final Information General Description The MIC2590B is a power controller supporting powe

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MIC2593 Micrel MIC2593 Dual-Slot PCI Hot Plug Controller General Description The MIC2593 is a power controller supporting power distribution requir

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3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 16,384 X 16,384 IDT72V71660 FEATURES: • 16K x 16K non-blocking switching at 16.384Mb/s • 64 serial inp

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SLOTTED OPTICAL SWITCH DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

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Global Mixed-mode Technology Inc. G570 Dual-Slot PCMCIA/CardBus Power Controller Features „Fully Integrated VCC and Vpp Switching for Dual Descrip

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MIC2563A Micrel MIC2563A Dual-Slot PCMCIA/CardBus Power Controller General Description The MIC2563A dual-slot PCMCIA (Personal Computer Memory Card

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SLOTTED PHOTOINTERRUPTER Description The MIT-5A116 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a

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SLOTTED PHOTOINTERRUPTER Description The MIT-5A116-U consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in

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SLOTTED PHOTOINTERRUPTER Description The MIT-5A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a

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SLOTTED PHOTOINTERRUPTER Description The MIT-5A11C consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a

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SLOTTED PHOTOINTERRUPTER Description The MIT-5A11J consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a

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