DATASHEET SM200 Module ©2008-2018 Synapse Wireles.
Eupec
200GB60DLC - BSM200GB60DLC
Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische.
eupec
BSM200GB120DLC - IGBT
Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GB120DLC Höchstzulässige Werte / Maximum rated values Elektrische Ei.
Siemens Semiconductor Group
BSM200GB120DL - IGBT
BSM 200 GB 120 DL IGBT Power Module Preliminary data • Low Loss IGBT • Low inductance halfbridge • Including fast free- wheeling diodes • Package wit.
Sinopower
SM2001CSK - Dual MOSFET
SM2001CSK ® Dual Enhancement Mode MOSFET (N- and P-Channel) Features · N-Channel 20V/9.5A, RDS(ON) =14mW(max.) @ VGS = 4.5V RDS(ON) =18mW(max.) @ VG.
Luguang Electronic
SM2000 - Surface Mount Rectifier
SM513-SM2000 Surface Mount Rectifiers REVERSE VOLTAGE:1300-2000V CURRENT: 1.0 A DO - 213AB Features ¡ó ¡ó ¡ó ¡ó Glass passivated device Ideal for su.
STMicroelectronics
STPS60SM200C - Power Schottky rectifier
STPS60SM200C Power Schottky rectifier Features ■ High reverse voltage (200 V) ■ Low forward voltage drop ■ High frequency operation Description The S.
eupec
BSM200GB170DLC - IGBT
Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 170 DLC Höchstzulässige Werte / Maximum rated values Elektrisch.
Sinopower
SM2006NSK - N-channel MOSFET
SM2006NSK Features • 20V/10A, RDS(ON) = 18mΩ (max.) @ VGS = 4.5V RDS(ON) = 27mΩ (max.) @ VGS = 2.5V • 100% UIS Tested • Reliable and Rugged • Lead Fre.
SPSEMI
TSM200 - Surface Mount Devices
PPTC/TSM Series Features Surface Mount Devices Lead free deivce Size 5045mm/2018 mils Surface Mount packaging for automated assembly Agency recogniti.
Taiwan Semiconductor
TSM200N03D - Dual N-Channel MOSFET
TSM200N03D Taiwan Semiconductor FEATURES ● Fast switching ● 100% avalanche tested ● Pb-free plating ● RoHS compliant ● Halogen-free package APPLICATI.
MIC
SM200 - SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR SM6.8 THRU SM200CA Breakdown Voltage Peak Pulse Power 6.8 to 200 Volts 400 Watts FEATURES • Plastic pac.
MIC
SM200A - SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR SM6.8 THRU SM200CA Breakdown Voltage Peak Pulse Power 6.8 to 200 Volts 400 Watts FEATURES • Plastic pac.
Synapse
SM200 - SNAP Engine Modules
DATASHEET SM200 Module ©2008-2018 Synapse Wireless, All Rights Reserved. All Synapse products are patent pending. Synapse , the Synapse logo, SNAP, an.
Siemens Semiconductor Group
BSM200GAL120DN2 - IGBT
BSM 200 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode • Package with insulated metal base plate Type BSM 200 GAL 120 DN2 Maximum.
Siemens Semiconductor Group
BSM200GB120 - IGBT
BSM 200 GB 120 DL IGBT Power Module Preliminary data • Low Loss IGBT • Low inductance halfbridge • Including fast free- wheeling diodes • Package wit.
Siemens Semiconductor Group
BSM200GB120DN2 - IGBT
BSM 200 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 200 GB .
Siemens Semiconductor Group
BSM200GT120DN2 - IGBT
BSM 200 GT 120 DN2 IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package wi.
Apuls Intergrated Circuits
ASM2006C - VERY LOW-COST VOICE SYNTHESIZER WITH 4-BIT MICROPROCESSOR
A PLUS MAKE YOUR PRODUCT A-PLUS ASM2006C DATA SHEET APLUS INTEGRATED CIRCUITS INC. Sales E-mail: sales@aplusinc.com.tw Address: 3 F-10, No. 32, S.
Sinopower
SM2004NSD - N-Channel MOSFET
SM2004NSD ® N-Channel Enhancement Mode MOSFET Features Pin Description · 20V/7A, RDS(ON)= 22mW(max.) @ VGS= 10V RDS(ON)= 28mW(max.) @ VGS= 4.5V RD.
