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BSM200GT120DN2 - IGBT

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BSM 200 GT 120 DN2 IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 200 GT 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package TRIPACK Ordering Code C67070-A2519-A67 1200V 300A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 300 200 TC = 25 °C TC = 125 °C Pulsed collector current, tp = 1 ms ICpuls 600 400 TC = 25 °C TC = 125 °C Power dissipation per IGBT Ptot 1400 W + 150 -55 ... + 150 ≤ 0.09 0.