SM311 Datasheet | Specifications & PDF Download

SM3116NBU Features · 30V/60A, RDS(ON)=5.7mW (Max.) @ VGS=10V RDS(ON)=9mW (Max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green Devices Availab

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SM3113NSU Features · 30V/85A, RDS(ON)= 3mW (Max.) @ VGS=10V RDS(ON)= 4.6mW (Max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green Devices Avail

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SM3119NAU Features · 30V/50A, RDS(ON)=10.5mW (max.) @ VGS=10V RDS(ON)=14.5mW (max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green Devices Ava

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SM3116NAF/SM3116NAFP ® N-Channel Enhancement Mode MOSFET Features Pin Description • 30V/58A, RDS(ON)= 5.5mΩ (Max.) @ VGS=10V RDS(ON)= 7.8mΩ (Max.

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SM3116NAU ® N-Channel Enhancement Mode MOSFET Features · 30V/60A, RDS(ON)=5.7mW (Max.) @ VGS=10V RDS(ON)=9mW (Max.) @ VGS=4.5V · 100% UIS + Rg Teste

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SM311 Preliminary Features . 860MHz to 960MHz freq range . Multi-protocol . Multi-regional . 16 dBm output power . Single antenna port . Field progra

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GSM3118JZF 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effectatransistorsaareausingatrenchaDMOS technology

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SM3114NAU Features · 30V/75A, RDS(ON)= 3.6mW (Max.) @ VGS=10V RDS(ON)= 5.2mW (Max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green Devices Ava

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SM3116NAF/SM3116NAFP ® N-Channel Enhancement Mode MOSFET Features Pin Description • 30V/58A, RDS(ON)= 5.5mΩ (Max.) @ VGS=10V RDS(ON)= 7.8mΩ (Max.

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SM3116NSU Features · 30V/60A, RDS(ON)=5.7mW (Max.) @ VGS=10V RDS(ON)=8mW (Max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green Devices Availab

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SM3116NSUC N-Channel Enhancement Mode MOSFET Features • 30V/80A RDS(ON)=5.7mΩ(max.)@VGS=10V RDS(ON)=8mΩ(max.)@VGS=4.5V • 100% UIS + Rg Tested • Reli

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ASM3112C/4112C DATA SHEET ASM3112C/4112C ASM3112C/4112C – VERY LOW-COST VOICE SYNTHESIZER WITH 4-BIT MICROPROCESSOR 1.0 General Description The ASM31

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SM3114NSU Features · 30V/75A, RDS(ON)=4.2mW (Max.) @ VGS=10V RDS(ON)=6mW (Max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green Devices Availab

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Elektronische Bauelemente SSM3110-C 2.2A, 100V, RDS(ON) 310m N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specif

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SM3117NSU ® N-Channel Enhancement Mode MOSFET Features · 30V/50A, RDS(ON)=7.2mW (max.) @ VGS=10V RDS(ON)=9.8mW (max.) @ VGS=4.5V · Provide Excellent

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SM3115NSU Features · 30V/60A, RDS(ON)=5.4mW (Max.) @ VGS=10V RDS(ON)=7.3mW (Max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green Devices Avail

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SM3117NSUC ® N-Channel Enhancement Mode MOSFET Features · 30V/50A, RDS(ON)=7.2mW (max.) @ VGS=10V RDS(ON)=9.8mW (max.) @ VGS=4.5V · Provide Excellen

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GSM3112Z 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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