SMBT3906 Datasheet | Specifications & PDF Download

www.DataSheet4U.com ISSUED DATE :2005/06/08 REVISED DATE : GSM BT 3906 Description Package Dimensions P NP EP ITAXI AL P L ANAR T RANS ISTO R The G

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PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: T

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SMBT 3906S PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two ( galvanic)

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PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: T

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PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: T

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MBT3906DW1, SMBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin −off of our popular SOT−23/SOT−323 three −leaded device. It is

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