SP12 Datasheet | Specifications & PDF Download

www.DataSheet4U.com H-CSP12F 12 (30 CM) SUBWOOFER 12 (30 ) Instruction manual www.DataSheet4U.com Description The set of subwoofer includes: - sub

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FM86C0 Switch with MIPI for LTE TRX Features switch for antenna TRX application. ⚫ Excellent insertion loss - 0.80dB Insertion Loss at 2.7GHz ⚫ P0

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BSP123-VB BSP123-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.100 at VGS = 10 V 100 0.120 at V

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www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.k

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SGM72112A SP12T LTE Switch with MIPI RFFE Interface GENERAL DESCRIPTION FEATURES The SGM72112A is a single-pole/twelve-throw (SP12T) antenna switch

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TinyLogic ULP-A Buffer with Three-State Output NC7SP125 The NC7SP125 is a single non−inverting 3−state buffer in tiny footprint packages. The device i

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BSP122-VB BSP122-VB Datasheet N-Channel 200 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200

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PRELIMINARY DATA SHEET SKY13437-11: 0.4-2.7 GHz SP12T Switch with GPIO Interface Applications • 2G/3G/4G multimode cellular handsets (LTE, UMTS, CDMA

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DISCRETE SEMICONDUCTORS DATA SHEET BSP120 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconducto

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ROHS series Part Number Code. Example : N 20 (1) (2) S P 0 0 5 (3) (4) - 5 (5) (6) (7) (1) NTC. ( Negative Temperature Coefficient ) (2) Nominal Diam

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DISCRETE SEMICONDUCTORS DATA SHEET BSP122 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconducto

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SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE PLASTIC MATERIAL USED CARRIES UL 94V-0 Marking Zener Voltage VZ (V) @ IZT Min Nom Max Test cur

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PE42412 Document Category: Product Specification UltraCMOS® SP12T RF Switch, 10 MHz–8 GHz Features • High isolation: 39 dB @ 6 GHz • Low insertion lo

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DISCRETE SEMICONDUCTORS DATA SHEET BSP121 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of April 1995 Fi

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Rev. 2.2 SIPMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated • Pb-free lead plating; RoHS compliant x Qualifie

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TVS Diode Arrays (SPA®®Diodes) SLouwrgeCaPproatceictatinocne-ESSPD12a5n5d SSeurrigees Protection - SP1255P Series SP1255 Series 160A for VBUS RoHS P

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SPECIFICATION FOR APPROVAL REF. : PROD. NAME ABC'S DWG NO. SP1235□□□□L□-□□□ PAGE 1 Shielded SMD Power Inductor REV. 20130503-A Ⅰ﹒Configuration and

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Preliminary SP1234 Short Descriptive Title Here FEATURES ■ This information is provided by the Design Team at time PDS is generated VIN 1 10 VOU

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 12 A, 650 V, D1, TO-220-2L FFSP1265A Description Silicon Carbide (SiC) Schottky Diodes use a complete

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BSP 123 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8 2.0V Pin 1 G Type BSP 123 Type BSP 123 Pin 2

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