SP12 Datasheet | Specifications & PDF Download

NC7SP125 TinyLogic ULP Buffer with 3-STATE Output June 2002 Revised June 2003 NC7SP125 TinyLogic ULP Buffer with 3-STATE Output General Descriptio

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www.DataSheet4U.com H-CSP12F 12 (30 CM) SUBWOOFER 12 (30 ) Instruction manual www.DataSheet4U.com Description The set of subwoofer includes: - sub

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 12 A, 650 V, D1, TO-220-2L FFSP1265A Description Silicon Carbide (SiC) Schottky Diodes use a complete

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BSP 123 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8 2.0V Pin 1 G Type BSP 123 Type BSP 123 Pin 2

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Surface Mount Specialty Polymer Solid Aluminum Electrolytic Capacitors NSP Series FEATURES • NEW “X” & “Y” TYPE HIGH RIPPLE CURRENT/VERY LOW ESR •

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Surface Mount Specialty Polymer Solid Aluminum Electrolytic Capacitors NSP Series FEATURES • NEW “X” & “Y” TYPE HIGH RIPPLE CURRENT/VERY LOW ESR •

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TinyLogic ULP-A Buffer with Three-State Output NC7SP125 The NC7SP125 is a single non−inverting 3−state buffer in tiny footprint packages. The device i

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www.DataSheet.co.kr PALO(P80)Series P0211N SP0231N Model: S SP0311N SP0421N SP0401N SP0412N SP0612N SP0802N SP1203N SP1214N SP1604N SP0422N SP0622N S

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DISCRETE SEMICONDUCTORS DATA SHEET BSP120 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconducto

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DISCRETE SEMICONDUCTORS DATA SHEET BSP121 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of April 1995 Fi

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DISCRETE SEMICONDUCTORS DATA SHEET BSP122 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconducto

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DISCRETE SEMICONDUCTORS DATA SHEET BSP127 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconducto

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Plastic Encapsulated Microcircuit 4.5Mb, 128K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect FEATURES • Synchronous Operation in relatio

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MSP120N08G MSP120N08G 80V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced technology. which provides h

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TSP058B - TSP320B Breakover Voltage Max. VBO @ IBO V 77 88 98 130 160 180 220 260 300 350 400 (3,5,6) On-State Voltage Max. V T @ 1A V 5 5 5 5 5 5 5

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Data Sheet Customer: Product: Wire Wound Power Inductor – CSP Series Size : 0603/0605/0703/0704/1204/1205/1207/1209 Issued Date: 24-Apr-2017 Edit

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www.DataSheet.co.kr PALO(P80)Series P0211N SP0231N Model: S SP0311N SP0421N SP0401N SP0412N SP0612N SP0802N SP1203N SP1214N SP1604N SP0422N SP0622N S

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m o .c w w w .D a S a t e e h U 4 t m o .c w w w t a .D S a e h t e U 4 . m o c w w w .D MSC Vertriebs-GmbH Productmarketing Di

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ROHS series Part Number Code. Example : N 20 (1) (2) S P 0 0 5 (3) (4) - 5 (5) (6) (7) (1) NTC. ( Negative Temperature Coefficient ) (2) Nominal Diam

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