SPW11N60C3 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N60C3 ISPW11N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤380mΩ ·Enhanceme

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Final data SPW11N60C3 VDS @ Tjmax RDS(on) ID 650 0.38 11 P-TO247 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ul

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