SPW11N60C3 Datasheet | Infineon

Feature - New revolutionary high voltage technology - Ultra low gate charge - Periodic avalanche rated - Extreme dv/dt rated - High peak current capability - Improved transconductance V Ω A Type SPW11N60C3 Package P-TO247 Ordering Code Q67040-S4418 Marking 11N60C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 5.5 A, VDD = 50 V Avalanche energy, repetitive t AR limited by Tjmax1) EAR I D = 11 A, VDD = 50 V Avalanche current, repetitive t AR limited by Tjmax I AR Reverse diode dv/dt dv/dt IS=11A, VDS=480V, T j=125°C Symbol ID Value 11 7 Unit A I D puls EAS 33 340 0.6 11 6 ±20 ±30 125 -55... +150 W °C 2003-09-17 A V/ns V m J Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Page 1 VGS VGS Ptot T j , T stg Final data Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, I D = 11 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25m A Drain-Source avalanche V(BR)DS V GS=0V, ID=11A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=500µΑ, VGS=VDS V DS=600V, VGS=0V, Tj=25°C, Tj=150°C Symbol min. Rth JC Rth JA Tsold - Values typ. max. 1 62 260 Unit K/W °C Values typ. 700 3 0.34 0.92 0.86 max. 3.9 600 2.1 - Unit V µA 25 250 100 0.38 n A Ω Gate-source leakage current I GSS V GS=30V, VDS=0V V GS=10V, ID=7A, Tj=25°C...