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SPW11N60C3 - Cool MOS Power Transistor

General Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

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Full PDF Text Transcription for SPW11N60C3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SPW11N60C3. For precise diagrams, and layout, please refer to the original PDF.

Final data SPW11N60C3 VDS @ Tjmax RDS(on) ID 650 0.38 11 P-TO247 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • ...

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• New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance V Ω A Type SPW11N60C3 Package P-TO247 Ordering Code Q67040-S4418 Marking 11N60C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 5.5 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 11 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Reverse diode dv/dt dv/dt IS=11A, VDS=480V, T j=125°C Symbol ID Val

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