SPW11N60CFD Datasheet | Infineon

Feature - New revolutionary high voltage technology - Ultra low gate charge - Periodic avalanche rated - Extreme d v/dt rated - High peak current capability - Intrinsic fast-recovery body diode - Extreme low reverse recovery charge VDS @ Tjmax RDS(on) ID 650 0.44 11 P-TO247 V Ω A Type SPW11N60CFD Package P-TO247 Ordering Code Q67040-S4619 Marking 11N60CFD Maximum Ratings Parameter Continuous drain current T C = 25 °C T C = 100 °C Pulsed drain current, t p limited by T jmax Avalanche energy, single pulse ID = 5.5 A, V DD = 50 V Avalanche energy, repetitive t AR limited by T jmax 1) EAR ID = 11 A, V DD = 50 V Avalanche current, repetitive t AR limited by T jmax Reverse diode d v/dt IS=11A, V DS=480V, T j=125°C Symbol ID Value 11 7 28 340 0.6 11 40 ±20 ±30 125 -55... +150 Unit A ID puls EAS m J IAR dv/dt VGS VGS Ptot Tj , Tstg A V/ns V W °C Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C Operating and storage temperature Page 1 2003-12-23 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 11 A, Tj = 125 °C Symbol dv/dt di F/dt Value 80 600 Unit V/ns A/µs Maximum diode mutation speed V DS = 480 V, ID = 11 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Drain-source breakdown voltage Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current V GS(th) IDSS ID=500µΑ, V GS=V DS V DS=600V, V GS=0V, Tj=25°C, Tj=150°C Symbol min. Rth JC Rth JA T sold - Values typ. max. 1 62 260 Unit K/W...