SPW11N60CFD - Cool MOS Power Transistor

Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Infineon Technologies

📥 Download Datasheet

Datasheet Details

Part number	SPW11N60CFD
Manufacturer	Infineon
File Size	152.55 KB
Description	Cool MOS Power Transistor
Datasheet	SPW11N60CFD Datasheet
Additional preview pages of the SPW11N60CFD datasheet.

📁 Similar Datasheet

SPW11N60CFD - N-Channel MOSFET (INCHANGE)
SPW11N60C3 - N-Channel MOSFET (INCHANGE)
SPW11N60S5 - N-Channel MOSFET (INCHANGE)
SPW11N80C3 - N-Channel MOSFET (INCHANGE)
SPW12N50C3 - N-Channel MOSFET (INCHANGE)
SPW15N60C3 - N-Channel MOSFET (INCHANGE)
SPW15N60CFD - N-Channel MOSFET (INCHANGE)
SPW16N50C3 - N-Channel MOSFET (INCHANGE)
SPW17N80C3 - N-Channel MOSFET (INCHANGE)
SPW-TKP80E - Heaven Tsukatachi kitchen (Sanyo)

Other Datasheets by Infineon Technologies

SPW11N60C2 - Cool MOS Power Transistor
SPW11N60C3 - Cool MOS Power Transistor
SPW11N60S5 - Cool MOS Power Transistor
SPW11N80C3 - Cool MOS Power Transistor
SPW12N50C3 - Cool MOS Power Transistor
SPW15N60C3 - Power Transistor
SPW15N60CFD - Power Transistor
SPW16N50C3 - Cool MOS Power Transistor

Full PDF Text Transcription

Click to expand full text

SPW11N60CFD Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme d v/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge VDS @ Tjmax RDS(on) ID 650 0.44 11 P-TO247 V Ω A Type SPW11N60CFD Package P-TO247 Ordering Code Q67040-S4619 Marking 11N60CFD Maximum Ratings Parameter Continuous drain current T C = 25 °C T C = 100 °C Pulsed drain current, t p limited by T jmax Avalanche energy, single pulse ID = 5.5 A, V DD = 50 V Avalanche energy, repetitive t AR limited by T jmax 1) EAR ID = 11 A, V DD = 50 V Avalanche current, repetitive t AR limited by T jmax Reverse diode d v/dt IS=11A, V DS=480V, T j=125°C Symbol ID Value 11 7 28 340 0.

Published: Sep 21, 2005 |