SPW11N60CFD - Cool MOS Power Transistor

Infineon

General Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

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SPW11N60CFD cool mos power transistor by Infineon - Datasheet Preview

Datasheet Details

Part number	SPW11N60CFD
Manufacturer	Infineon
File Size	152.55 KB
Description	Cool MOS Power Transistor
Datasheet	SPW11N60CFD Datasheet

Full PDF Text Transcription for SPW11N60CFD (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SPW11N60CFD. For precise diagrams, and layout, please refer to the original PDF.

SPW11N60CFD Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme d v/dt rated • Hig...

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ow gate charge • Periodic avalanche rated • Extreme d v/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge VDS @ Tjmax RDS(on) ID 650 0.44 11 P-TO247 V Ω A Type SPW11N60CFD Package P-TO247 Ordering Code Q67040-S4619 Marking 11N60CFD Maximum Ratings Parameter Continuous drain current T C = 25 °C T C = 100 °C Pulsed drain current, t p limited by T jmax Avalanche energy, single pulse ID = 5.5 A, V DD = 50 V Avalanche energy, repetitive t AR limited by T jmax 1) EAR ID = 11 A, V DD = 50 V Avalanche current, repetitive t AR limited by T jmax Reverse diode d v/dt IS

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