SPW11N60CFD Datasheet and Specifications PDF

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* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme d v/dt rated
* High peak current capability
* Intrinsic fast-recovery body diode
* Extreme low reverse recovery charge VDS @ Tjmax RDS(on) ID 650 0.44 11 P-TO247 V Ω A Type SPW11N60CFD Package.

isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N60CFD ISPW11N60CFD ·FEATURES ·Static drain-source on-resistance: RDS(on)≤440mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-.

*Static drain-source on-resistance: RDS(on)≤440mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*High peak current capability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source .