SPW11N60S5
SPW11N60S5 is Cool MOS Power Transistor manufactured by Infineon.
Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance
VDS RDS(on) ID
600 0.38 11
P-TO247
V Ω A
Type SPW11N60S5
Package P-TO247
Ordering Code Q67040-S4239
Marking 11N60S5
Maximum Ratings Parameter Symbol ID Value Unit
Continuous drain current
TC = 25 °C TC = 100 °C
A 11 7
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
I D = 5.5 A, VDD = 50 V
I D puls EAS
22 340 0.6 11 ±20
±30 m J
Avalanche energy, repetitive t AR limited by Tjmax1) EAR
I D = 11 A, VDD = 50 V
Avalanche current, repetitive t AR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz)
Power dissipation, T C = 25°C
A V W °C
VGS Ptot T j , T stg
125 -55... +150
Operating and storage temperature
Rev. 2.1
Page 1
2004-03-30
Maximum Ratings Parameter Drain Source voltage slope
V DS = 480 V, ID = 11 A, Tj = 125 °C
Symbol dv/dt
Value 20
Unit...
