Full PDF Text Transcription for SPW11N60CFD (Reference)
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isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N60CFD ISPW11N60CFD ·FEATURES ·Static drain-source on-resistance: RDS(on)≤440mΩ ·Enhancement mode: ·100% avala...
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ain-source on-resistance: RDS(on)≤440mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 28 PD Total Dissipation @TC=25℃ 125 Tj Max.
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