SPW11N60CFD - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on)≤440mΩ.
Enhancement mode:.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	SPW11N60CFD
Manufacturer	Inchange Semiconductor
File Size	238.79 KB
Description	N-Channel MOSFET
Datasheet	SPW11N60CFD Datasheet
Additional preview pages of the SPW11N60CFD datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N60CFD ISPW11N60CFD ·FEATURES ·Static drain-source on-resistance: RDS(on)≤440mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 28 PD Total Dissipation @TC=25℃ 125 Tj Max.

Published: Oct 4, 2020 |