SS110 Datasheet | Specifications & PDF Download

Power Diodes Controlled Avalanche Features: • • • • • • • For surface mounted application Metal to silicon rectifier, majority carrier conduction Low

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May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect tr

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www.DataSheet4U.com SMD Schottky Barrier Rectifier SS12-G THRU SS110-G Reverse Voltage: 20~100 Volts Forward Current: 1.0 Amp Features Ideal for surf

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www.DataSheet4U.com Switching Diode *150mW DO-34 * Glass silicon switching diodes * We declare that the material of product compliance with RoHS requ

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1SS110 Silicon Epitaxial Planar Diode for Tuner Band Switch ADE-208-179B (Z) Rev. 2 Features • Low forward resistance. (r f = 0.9 Ω max) • Suitable f

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SS12 THRU SS110 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts DO-214AC Forward Current - 1.0 Ampere FEATURES The plastic

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BSS 110 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8 -2.0 V Pin 1 S Type BSS 110 Type BSS 110 BS

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Sendo International SS110 Series TO-5 Pressure Transducer Applications 1,Pressure calibrator 2,Air pressure control 3,Physiology guarding 4,Communica

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NOT RECOMMENDED FOR NEW DESIGNS USE SS12E-TP~SS110E-TP SERIES MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Ch

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Frontier Electronics Corp. 667 E. COCHRAN STREET, SIMI VALLEY, CA 93065 TEL: (805) 522-9998 FAX: (805) 522-9989 E-mail: frontiersales@frontierusa.com

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SS12 thru SS115 Schottky Barrier Rectifiers PRODUCT SUMMARY 1.0AMP Surface Mount FEATURES For surface mounted application
Easy pick and place
Met

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DSS12U THRU DSS125U Technical Data Data Sheet N1873, Rev. A DSS12U THRU DSS125U SINGLE PHASE 1.0AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SOD-123F

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SS12~SS110 1A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES  EXTREMELY LOW VF  LOW STORED CHARGE, MAJORITY CARRIER CONDUCTION  LOW POWER LOSS

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Website: www.kingtronics.com Email: info@kingtronics.com Tel: (852) 8106 7033 Fax: (852) 8106 7099 SS12 THRU SS110 1.0AMP.SURFACE MOUNT SCHOTTKY B

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www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 SS12 - SS110 PRV : 20 - 100 Volts IO : 1.0 Ampere FEATURES : * * * * * * * * High c

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Schottky Barrier Rectifiers Production specification SS18--SS110 Features  Metal silicon junction, majority carrier conduction  High surge capabil

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DISCRETE SEMICONDUCTORS DATA SHEET BSS110 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconducto

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www.DataSheet4U.com SMD Schottky Barrier Rectifier SS12-G THRU SS110-G Reverse Voltage: 20~100 Volts Forward Current: 1.0 Amp Features Ideal for surf

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www.DataSheet4U.com SMD Schottky Barrier Rectifier SS12-G THRU SS110-G Reverse Voltage: 20~100 Volts Forward Current: 1.0 Amp Features Ideal for surf

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SS12 THRU SS110 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS Reverse Voltage - 20 to 100 V Forward Current - 1 A Features • Plastic package has Underwrit

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