SS12-G Datasheet | Specifications & PDF Download

SS12 - S100 — Schottky Rectifier SS12 - S100 Schottky Rectifier Features • Glass-Passivated Junctions • High-Current Capability, Low VF Applications

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N-Channel 100V MOSFET Features: Surface-mounted package Halogen free Application DC-DC Portable appliance Power management BSS123 BVDSS= 100V , ΩRDS(

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SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 4 – APRIL 1998 FEATURES * BVDSS = 100V * Low Threshold PARTMARKING DETAIL – SAA BSS123A S D

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DSS12U THRU DSS125U Technical Data Data Sheet N1873, Rev. A DSS12U THRU DSS125U SINGLE PHASE 1.0AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SOD-123F

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ADVANCE INFORMATION BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 100V RDS(ON) 6.0Ω @ VGS = 10V ID TA = +25°C 0

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www.DataSheet4U.com DIM600BSS12-A000 DIM600BSS12-A000 Single Switch IGBT Module Replaces February 2004 version, issue PDS5692-2.0 DS5692-3.0 June 20

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www.DataSheet4U.com NSS12100XV6T1G 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are mini

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www.DataSheet4U.com NSS12200WT1G 12 V, 3 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniat

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SS12 THRU S100 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere FEATURES Plastic package has Underwriters Labor

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SS12 THRU SS110 1.0 AMP. Surface Mount Schottky Barrier Rectifiers Voltage Range 20 to 100 Volts Current 1.0 Ampere Features For surface mounted appl

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www.DataSheet.co.kr MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $

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Main Product Characteristics VDSS 120V RDS(on) 4.7mΩ (typ.) ID 180A ① Features and Benefits TO-247  Advanced Process Technology  Special desig

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Main Product Characteristics VDSS RDS(on) 120V 4mΩ (typ.) ID 180A ① Features and Benefits TO-220  Advanced Process Technology  Special designe

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UNISONIC TECHNOLOGIES CO., LTD BSS123 Preliminary 170mA, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC BSS123 is an N-channel mode Power MOSFE

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N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS123 General Description These N−Channel enhancement mode field effect transistors ar

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BSS123 N-Channel ENHANCEMENT MODE MOSFET Description These N-Channel enhancement mode field effect transistors uses advanced trench technology. Th

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS123 N Channel MOSFET V(BR)DSS 100 V RDS(on)MAX 6Ω@10V 10Ω@

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CYStech Electronics Corp. N-CHANNEL MOSFET BVDSS ID Spec. No. : C580N3 Issued Date : 2011.09.16 Revised Date : 2013.10.17 Page No. : 1/8 100V VGS=10

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SMD Type Schottky Barrier Diodes SS12F ~ SS120F TransDisiotodress Ƶ Features ƽ Metal silicon junction, majority carrier conduction ƽ For surface mo

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