SS12-L Datasheet | Specifications & PDF Download

SS12 - S100 — Schottky Rectifier SS12 - S100 Schottky Rectifier Features • Glass-Passivated Junctions • High-Current Capability, Low VF Applications

Rating: 1 ★ (8 votes)

N-Channel 100V MOSFET Features: Surface-mounted package Halogen free Application DC-DC Portable appliance Power management BSS123 BVDSS= 100V , ΩRDS(

Rating: 1 ★ (8 votes)

Rating: 1 ★ (6 votes)

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 4 – APRIL 1998 FEATURES * BVDSS = 100V * Low Threshold PARTMARKING DETAIL – SAA BSS123A S D

Rating: 1 ★ (6 votes)

SS12 THRU S100 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere FEATURES Plastic package has Underwriters Labor

Rating: 1 ★ (6 votes)

SS12 THRU SS110 1.0 AMP. Surface Mount Schottky Barrier Rectifiers Voltage Range 20 to 100 Volts Current 1.0 Ampere Features For surface mounted appl

Rating: 1 ★ (6 votes)

DSS12U THRU DSS125U Technical Data Data Sheet N1873, Rev. A DSS12U THRU DSS125U SINGLE PHASE 1.0AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SOD-123F

Rating: 1 ★ (5 votes)

ADVANCE INFORMATION BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 100V RDS(ON) 6.0Ω @ VGS = 10V ID TA = +25°C 0

Rating: 1 ★ (5 votes)

NOT RECOMMENDED FOR NEW DESIGNS USE SS12E-TP~SS110E-TP SERIES MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Ch

Rating: 1 ★ (5 votes)

www.DataSheet4U.com DIM600BSS12-A000 DIM600BSS12-A000 Single Switch IGBT Module Replaces February 2004 version, issue PDS5692-2.0 DS5692-3.0 June 20

Rating: 1 ★ (5 votes)

www.DataSheet4U.com NSS12100XV6T1G 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are mini

Rating: 1 ★ (5 votes)

www.DataSheet4U.com NSS12200WT1G 12 V, 3 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniat

Rating: 1 ★ (5 votes)

www.DataSheet.co.kr MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $

Rating: 1 ★ (5 votes)

LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G FEATURE ƽ Pb-Free Package is available. ƽ S- Prefix for Automotive and Other Applicati

Rating: 1 ★ (5 votes)

Main Product Characteristics VDSS 120V RDS(on) 4.7mΩ (typ.) ID 180A ① Features and Benefits TO-247  Advanced Process Technology  Special desig

Rating: 1 ★ (5 votes)

Main Product Characteristics VDSS RDS(on) 120V 4mΩ (typ.) ID 180A ① Features and Benefits TO-220  Advanced Process Technology  Special designe

Rating: 1 ★ (5 votes)

UNISONIC TECHNOLOGIES CO., LTD BSS123 Preliminary 170mA, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC BSS123 is an N-channel mode Power MOSFE

Rating: 1 ★ (5 votes)

N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS123 General Description These N−Channel enhancement mode field effect transistors ar

Rating: 1 ★ (5 votes)

BSS123 N-Channel ENHANCEMENT MODE MOSFET Description These N-Channel enhancement mode field effect transistors uses advanced trench technology. Th

Rating: 1 ★ (5 votes)

DIM1200FSS12-A000 Single Switch IGBT Module DS5834-1.2 August 2008 (LN26321) FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated

Rating: 1 ★ (5 votes)