SS18 Datasheet | Specifications & PDF Download

GP1600FSS18 GP1600FSS18 Single Switch IGBT Module Replaces January 2000 version, DS5136-3.0 DS5176-4.2 January 2001 FEATURES s s s s Non Punch Thro

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1SS181 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applicatio

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GP1200FSS18 GP1200FSS18 Single Switch IGBT Module Replaces February 2000 version, DS5260-2.0 DS5260-3.1 January 2001 FEATURES s s s s Non Punch Thr

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GP400LSS18 GP400LSS18 Single Switch IGBT Module DS5305-2.0 November 2000 FEATURES s s s s Non Punch Through Silicon Isolated Copper Baseplate Low I

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Transys Electronics LIMITED SOT-23 Plastic-Encapsulated Diodes 1SS187 SWITCHING DIODE FEATURES Power dissipation PD : 150 mW(Tamb=25℃) Forward Curren

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® WON-TOP ELECTRONICS 1SS187 SURFACE MOUNT FAST SWITCHING DIODE Pb Features  High Conductance  Fast Switching  Surface Mount Package Ideally Suit

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Transys Electronics LIMITED SOT-23 Plastic-Encapsulated Diodes 1SS181 SWITCHING DIODE FEATURES Power dissipation PD : 150 mW(Tamb=25℃) Forward Curren

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GP1201FSS18 GP1201FSS18 Single Switch Low VCE(SAT) IGBT Module DS5411-1.1 January 2001 FEATURES s s s s s Low VCE(SAT) Non Punch Through Silicon Is

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GP1601FSS18 GP1601FSS18 Single Switch Low VCE(SAT) IGBT Module Replaces January 2000 version, DS5248-3.0 DS5248-4.2 January 2001 FEATURES s s s s s

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package : SC-59 

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® WON-TOP ELECTRONICS 1SS181 SURFACE MOUNT FAST SWITCHING DIODE Pb Features  Dual Diode Common Anode  Fast Switching  Surface Mount Package Ideal

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS181 Switching Diodes FEATURES y Low forward voltage y Fast

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Production specification Surface mount switching diode FEATURES  Low forward voltage Pb VF=0.92V(typ). Lead-free  Small total capacitance:CT=

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application Featrues z Low forward voltage : VF (3) = 0.9V (typ.) z Fast reverse recovery time

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RoHS 1SS181 SOT-23 Plastic-Encapsulate DIODE Features DPower dissipation PD : 150 mW (Tamb=25oC) TForward Current .,LIF : 100 mA Reverse Voltage VR

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RoHS 1SS184 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Re

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GSDSS12W Series Surface Mount Schottky Rectifiers Product Description Reverse Voltage 20V to 100V Forward Current 1.0A Packages Features „ Ideally s

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