SS18 Datasheet | Specifications & PDF Download

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS184 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package: SC-59  Low fo

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package : SC-59 

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MOSEL VITELIC INC. MSS0307/S0607/S0907/S1207/S1507/S1807 3 / 6 / 9 / 12 / 15 / 18 VOICE ROM September 1996 Features Single power supply can opera

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LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr =

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LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application L1SS184LT1G Featrues z Low forward voltage : VF (3) = 0.9V (typ.) z Fast reverse

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SMD Type Diodes ULTRA HIGH SPEED SWITCHING APPLICATION 1SS181 Features Small Package Low forward voltage :VF(3) = 0.92 V(Typ.) Fast Reverse Recover

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NOT RECOMMENDED FOR NEW DESIGNS USE SS12E-TP~SS110E-TP SERIES MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Ch

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WILLAS SCS501V VOLTAGE 40V 0.1AMP Schottky Barrier Rectifiers Ultra High Speed Switching .006 (0.15) max. Application Pb Free Product FEATURES 1S

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R FEATURES Low Power Loss High Efficiency Ideal For Automated Placement Guard Ring For Over-voltage Protection High Surge Current Capability MECHANICAL

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() CRSS185N25N5Z SkyMOS5 N-MOSFET 250V, 15.5mΩ, 90A Features • Uses CRM(CQ) advanced SkyMOS5 technology • Extremely low on-resistance RDS(on) • Exce

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Certificate TH97/10561QM Certificate TW00/17276EM 1SS184 PRV : 85 Volts Io : 100 mA FEATURES : * Small package * Low forward voltage * Fast reverse

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Surface Mount Switching Diodes P b Lead(Pb)-Free Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * Hig

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Transys Electronics LIMITED SOT-23 Plastic-Encapsulated Diodes 1SS181 SWITCHING DIODE FEATURES Power dissipation PD : 150 mW(Tamb=25℃) Forward Curren

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GP1600FSS18 GP1600FSS18 Single Switch IGBT Module Replaces January 2000 version, DS5136-3.0 DS5176-4.2 January 2001 FEATURES s s s s Non Punch Thro

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GP1601FSS18 GP1601FSS18 Single Switch Low VCE(SAT) IGBT Module Replaces January 2000 version, DS5248-3.0 DS5248-4.2 January 2001 FEATURES s s s s s

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1SS187 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applicatio

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® WON-TOP ELECTRONICS 1SS184 SURFACE MOUNT FAST SWITCHING DIODE Pb Features  Dual Diode Common Cathode  Fast Switching  Surface Mount Package Ide

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® WON-TOP ELECTRONICS SS12 – S100 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

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Surface Mount Switching Diodes P b Lead(Pb)-Free Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * Hig

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