SS18 Datasheet | Specifications & PDF Download

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GP400LSS18 GP400LSS18 Single Switch IGBT Module DS5305-2.0 November 2000 FEATURES s s s s Non Punch Through Silicon Isolated Copper Baseplate Low I

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS184 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package: SC-59  Low fo

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1. CATHODE 2. N.C. 3. ANODE Features — Low forward voltage : VF(3)=0.92V(typ.) — Fast reverse recovery time : trr=1.6ns(typ.) MARKING: D3 1SS187

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Certificate TH97/10561QM Certificate TW00/17276EM 1SS184 PRV : 85 Volts Io : 100 mA FEATURES : * Small package * Low forward voltage * Fast reverse

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS181 Switching Diodes FEATURES y Low forward voltage y Fast

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WILLAS SCS501V VOLTAGE 40V 0.1AMP Schottky Barrier Rectifiers Ultra High Speed Switching .006 (0.15) max. Application Pb Free Product FEATURES 1S

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Surface Mount Switching Diodes P b Lead(Pb)-Free Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * Hig

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RoHS 1SS184 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Re

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Surface Mount Switching Diodes P b Lead(Pb)-Free Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * Hig

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1SS181 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applicatio

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Transys Electronics LIMITED SOT-23 Plastic-Encapsulated Diodes 1SS181 SWITCHING DIODE FEATURES Power dissipation PD : 150 mW(Tamb=25℃) Forward Curren

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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GP1600FSS18 GP1600FSS18 Single Switch IGBT Module Replaces January 2000 version, DS5136-3.0 DS5176-4.2 January 2001 FEATURES s s s s Non Punch Thro

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package : SC-59 

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® WON-TOP ELECTRONICS 1SS181 SURFACE MOUNT FAST SWITCHING DIODE Pb Features  Dual Diode Common Anode  Fast Switching  Surface Mount Package Ideal

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS187 Switching Diode FEATURES y Low forward voltage y Fast rev

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE 1SS187 FEATURES * Power dissipation PD: 150 mW(Tamb=25OC) * Forward current IF:

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1SS187 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applicatio

Rating: 1 ★ (3 votes)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS184 Switching Diode FEATURES y Low forward voltage y Fast rev

Rating: 1 ★ (3 votes)