SS18-G Datasheet | Specifications & PDF Download

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS184 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package: SC-59  Low fo

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GP400LSS18 GP400LSS18 Single Switch IGBT Module DS5305-2.0 November 2000 FEATURES s s s s Non Punch Through Silicon Isolated Copper Baseplate Low I

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1SS187 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applicatio

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SS12 thru SS110 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES ●For surface mounted applications ●Metal-Semiconductor junction with guarding ●Epit

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Surface Mount Switching Diodes P b Lead(Pb)-Free Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * Hig

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Transys Electronics LIMITED SOT-23 Plastic-Encapsulated Diodes 1SS181 SWITCHING DIODE FEATURES Power dissipation PD : 150 mW(Tamb=25℃) Forward Curren

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1. CATHODE 2. N.C. 3. ANODE Features — Low forward voltage : VF(3)=0.92V(typ.) — Fast reverse recovery time : trr=1.6ns(typ.) MARKING: D3 1SS187

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Production specification Surface mount switching diode FEATURES  Low forward voltage Pb VF=0.92V(typ). Lead-free  Small total capacitance:CT=

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SMD Type Diodes ULTRA HIGH SPEED SWITCHING APPLICATION 1SS187 Features Small Package Low forward voltage :VF(3) = 0.92 V(Typ.) Fast Reverse Recover

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1SS184 .119(3.0) .110(2.8) .100(2.55) .089(2.25) .079(2.0) .071(1.8) .020(.50) .012(.30) .056(1.4) .047(1.2) .020(0.5) .012(0.3) .044(1.1) .035(

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Plastic-Encapsulate Diodes SWITCHING DIODES FEATURES Low forward voltage : VF(3)=0.9V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) 1SS184 MAR

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MOSEL VITELIC INC. MSS0307/S0607/S0907/S1207/S1507/S1807 3 / 6 / 9 / 12 / 15 / 18 VOICE ROM September 1996 Features Single power supply can opera

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LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application Featrues z Low forward voltage : VF (3) = 0.9V (typ.) z Fast reverse recovery time

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SMD Type Diodes ULTRA HIGH SPEED SWITCHING APPLICATION 1SS184 Features Small Package Low forward voltage :VF(3) = 0.9 V(Typ.) Fast Reverse Recovery

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GP1200FSS18 GP1200FSS18 Single Switch IGBT Module Replaces February 2000 version, DS5260-2.0 DS5260-3.1 January 2001 FEATURES s s s s Non Punch Thr

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GP1600FSS18 GP1600FSS18 Single Switch IGBT Module Replaces January 2000 version, DS5136-3.0 DS5176-4.2 January 2001 FEATURES s s s s Non Punch Thro

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package : SC-59 

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package : SC-59 

Rating: 1 ★ (4 votes)

FRONTIER ELECTRONICS CO., LTD. 1A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS SS12 THRU SS110 FEATURES EXTREMELY LOW VF LOW STORED CHARGE, MAJORIT

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