www.DataSheet4U.com SMD Schottky Barrier Rectifie.
JCET
1SS187 - SWITCHING DIODE
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS187 Switching Diode FEATURES y Low forward voltage y Fast rev.
EIC
1SS184 - SILICON EPITAXIAL PLANAR DIODE
Certificate TH97/10561QM Certificate TW00/17276EM 1SS184 PRV : 85 Volts Io : 100 mA FEATURES : * Small package * Low forward voltage * Fast reverse .
JCET
1SS181 - SWITCHING DIODE
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS181 Switching Diodes FEATURES y Low forward voltage y Fast .
GME
1SS184 - Surface mount switching diode
Production specification Surface mount switching diode FEATURES Low forward voltage VF=0.9V(typ). Pb Lead-free Small total capacitance. Fa.
GME
1SS187 - Surface mount switching diode
Production specification Surface mount switching diode FEATURES Low forward voltage Pb VF=0.92V(typ). Lead-free Small total capacitance:CT=.
WILLAS
1SS181 - Ultra High Speed Switching Diode
WILLAS SCS501V VOLTAGE 40V 0.1AMP Schottky Barrier Rectifiers Ultra High Speed Switching .006 (0.15) max. Application Pb Free Product FEATURES 1S.
MCC
1SS181 - High Speed Switching Diodes
MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"#.
RECTRON
1SS181 - SWITCHING DIODE
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE 1SS181 FEATURES * Power dissipation PD: 150 mW(Tamb=25OC) * Forward current IF:.
WEITRON
1SS181 - Surface Mount Switching Diodes
Surface Mount Switching Diodes P b Lead(Pb)-Free Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * Hig.
Leshan Radio Company
L1SS181LT1 - Ultra High Speed Switching
LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr =.
Leshan Radio Company
L1SS181LT1G - Ultra High Speed Switching
LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application L1SS181LT1G z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recover.
WEJ
1SS181 - DIODE
RoHS 1SS181 SOT-23 Plastic-Encapsulate DIODE Features DPower dissipation PD : 150 mW (Tamb=25oC) TForward Current .,LIF : 100 mA Reverse Voltage VR .
HY
SS18L - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SS12L thru SS110L SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 20 to 100 Volts FORWARD CURRENT - 1.0 Ampere .077(1.95) .061(1.55) F.
WILLAS
SS18 - 1.0AMP SCHOTTKY BARRIER RECTIFIERS
WILLAS 1.0AMP SCHOTTKY BARRIER RECTIFIERS SMA PACKAGE SS12 THRU SS120 FEATURES * Ideal for surface mounted applications * Low leakage current * Meta.
SEMTECH
1SS181 - SILICON EPITAXIAL PLANAR DIODE
1SS181 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applicatio.
Kexin
1SS181 - ULTRA HIGH SPEED SWITCHING DIODE
SMD Type Diodes ULTRA HIGH SPEED SWITCHING APPLICATION 1SS181 Features Small Package Low forward voltage :VF(3) = 0.92 V(Typ.) Fast Reverse Recover.
TRANSYS
1SS181 - Plastic-Encapsulated Diodes
Transys Electronics LIMITED SOT-23 Plastic-Encapsulated Diodes 1SS181 SWITCHING DIODE FEATURES Power dissipation PD : 150 mW(Tamb=25℃) Forward Curren.
LGE
1SS184 - Switching Diodes
1.ANODE 2. ANODE 3. CATHODE Features Low forward voltage : VF(3)=0.9V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: B3 Maximum.
Kexin
SS18F - Schottky Barrier Diodes
SMD Type Schottky Barrier Diodes SS12F ~ SS120F TransDisiotodress Ƶ Features ƽ Metal silicon junction, majority carrier conduction ƽ For surface mo.
