SS18-G Datasheet | Specifications & PDF Download

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package : SC-59 

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS184 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package: SC-59  Low fo

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LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr =

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LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application Featrues z Low forward voltage : VF (3) = 0.9V (typ.) z Fast reverse recovery time

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MOSEL VITELIC INC. MSS0307/S0607/S0907/S1207/S1507/S1807 3 / 6 / 9 / 12 / 15 / 18 VOICE ROM September 1996 Features Single power supply can opera

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LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application L1SS184LT1G Featrues z Low forward voltage : VF (3) = 0.9V (typ.) z Fast reverse

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Certificate TH97/10561QM Certificate TW00/17276EM 1SS184 PRV : 85 Volts Io : 100 mA FEATURES : * Small package * Low forward voltage * Fast reverse

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Production specification Surface mount switching diode FEATURES  Low forward voltage Pb VF=0.92V(typ). Lead-free  Small total capacitance:CT=

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Transys Electronics LIMITED SOT-23 Plastic-Encapsulated Diodes 1SS187 SWITCHING DIODE FEATURES Power dissipation PD : 150 mW(Tamb=25℃) Forward Curren

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Plastic-Encapsulate Diodes SWITCHING DIODES FEATURES Low forward voltage : VF(3)=0.9V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) 1SS184 MAR

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Surface Mount Switching Diodes P b Lead(Pb)-Free Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * Hig

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SMD Type Diodes ULTRA HIGH SPEED SWITCHING APPLICATION 1SS181 Features Small Package Low forward voltage :VF(3) = 0.92 V(Typ.) Fast Reverse Recover

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Schottky Rectifier SS12 - S100 Description The SS12−S100 series includes high−efficiency, low power loss, general−propose schottky rectifiers. The cli

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() CRSS185N25N5Z SkyMOS5 N-MOSFET 250V, 15.5mΩ, 90A Features • Uses CRM(CQ) advanced SkyMOS5 technology • Extremely low on-resistance RDS(on) • Exce

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GP1600FSS18 GP1600FSS18 Single Switch IGBT Module Replaces January 2000 version, DS5136-3.0 DS5176-4.2 January 2001 FEATURES s s s s Non Punch Thro

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GP1601FSS18 GP1601FSS18 Single Switch Low VCE(SAT) IGBT Module Replaces January 2000 version, DS5248-3.0 DS5248-4.2 January 2001 FEATURES s s s s s

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS181 Switching Diodes FEATURES y Low forward voltage y Fast

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Production specification Surface mount switching diode FEATURES  Low forward voltage VF=0.9V(typ). Pb Lead-free  Small total capacitance.  Fa

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NOT RECOMMENDED FOR NEW DESIGNS USE SS12E-TP~SS110E-TP SERIES MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Ch

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